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Here, an optoelectronic synaptic transistor based on a MoS\n                    <jats:sub>2<\/jats:sub>\n                    \/h\u2010BN\/Au heterostructure with Au as the floating gate is demonstrated. Benefiting from the high work function of the metal floating gate (MFG), the device exhibits efficient non\u2010volatile charge storage with a large memory window of 97.6\u00a0V and a stored charge density of 7.0 \u00d7 10\n                    <jats:sup>12<\/jats:sup>\n                    cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    . Under optical stimulation, the device shows pronounced wavelength\u2010dependent synaptic plasticity. The device exhibited data retention exceeding 3000 s and cycling endurance over 1600 programming\/erasing cycles. Separately, reproducible programming\/erasing operation was observed after 200 days of storage under ambient conditions. In particular, 450\u00a0nm illumination generates high\u2010energy photocarriers in the MoS\n                    <jats:sub>2<\/jats:sub>\n                    channel, which more effectively modulate the charge state of the MFG through carrier transfer across the h\u2010BN barrier, leading to stable long\u2010term potentiation behavior. More importantly, grounding the MFG suppresses the non\u2010volatile optical synaptic response, highlighting the dominant contribution of floating\u2010gate charge storage over interfacial trapping effects. Using experimentally measured weight\u2010update characteristics, a hardware\u2010aware neural\u2010network simulation achieves 98.4% test accuracy on MNIST handwritten\u2010digit classification. This work highlights the potential of the MFG architecture for integrated optoelectronic memory and neuromorphic vision applications.\n                  <\/jats:p>","DOI":"10.1002\/advs.78038","type":"journal-article","created":{"date-parts":[[2026,9,27]],"date-time":"2026-09-27T18:00:31Z","timestamp":1790532031000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Highly Stable and Non\u2010Volatile Optoelectronic Synapses for Sensing, Memory, and Computing Enabled by a Deep\u2010Potential Floating Gate"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-1183-8364","authenticated-orcid":false,"given":"Shuo","family":"Lei","sequence":"first","affiliation":[{"name":"National Key Laboratory of Terahertz Perception and Communication (TPCL) University of Shanghai for Science and Technology  Shanghai China"},{"name":"Shanghai Key Lab of Modern Optical Systems Terahertz Technology Innovation Research 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