{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T05:02:13Z","timestamp":1790744533851,"version":"4.1.0"},"reference-count":58,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,29]],"date-time":"2026-09-29T00:00:00Z","timestamp":1790640000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,9,29]],"date-time":"2026-09-29T00:00:00Z","timestamp":1790640000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS\u20102024\u201000445552"],"award-info":[{"award-number":["RS\u20102024\u201000445552"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["advanced.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Advanced Science"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Selector\u2010only memory (SOM) is a promising next\u2010generation memory architecture that integrates both selector and memory functionalities within a single two\u2010terminal chalcogenide device. Despite its structural simplicity, the reliability of SOM devices remains poorly understood at the mechanistic level. Here, the failure mechanisms governing endurance, retention, and threshold voltage (V\n                    <jats:sub>th<\/jats:sub>\n                    ) drift of GeSbSe SOM devices are systematically investigated through physical and electrical analyses. Under endurance cycling, time\u2010of\u2010flight secondary ion mass spectrometry (ToF\u2010SIMS) reveals a preferential reduction of Se content, reorganizing the trap environment toward shallower states, confirmed by Poole\u2013Frenkel (P\u2013F), Arrhenius, and drive\u2010level capacitance profiling (DLCP) analyses. Trap shallowing drives a gradual decrease of both V\n                    <jats:sub>th<\/jats:sub>\n                    states, while heteropolar bond depletion weakens the polarity\u2010dependent trap response asymmetry, narrowing the memory margin and leading to endurance failure. Under retention and V\n                    <jats:sub>th<\/jats:sub>\n                    drift, x\u2010ray photoelectron spectroscopy (XPS) and Raman spectroscopy reveal that thermal stimulation drives short\u2010range structural relaxation toward deeper trap states, directly driving time\u2010dependent V\n                    <jats:sub>th<\/jats:sub>\n                    rise and asymmetric V\n                    <jats:sub>th<\/jats:sub>\n                    drift. Furthermore, cycling\u2010induced depletion of Se\u2010related bonding resources amplifies susceptibility to structural relaxation, establishing a self\u2010reinforcing degradation pathway that accelerates memory margin loss. These findings establish a unified trap\u2010based framework linking atomic\u2010scale structural changes to device\u2010level reliability degradation.\n                  <\/jats:p>","DOI":"10.1002\/advs.78092","type":"journal-article","created":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T04:50:43Z","timestamp":1790743843000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Opposite Trap\u2010State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory"],"prefix":"10.1002","author":[{"given":"Byung Jun","family":"Lee","sequence":"first","affiliation":[{"name":"Department of System Semiconductor Engineering Yonsei University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Won Hee","family":"Jeong","sequence":"additional","affiliation":[{"name":"Department of System Semiconductor Engineering Yonsei University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8006-8405","authenticated-orcid":false,"given":"Min Kyu","family":"Yang","sequence":"additional","affiliation":[{"name":"Department of Artificial Intelligence Semiconductor Engineering Sahmyook University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2911-4525","authenticated-orcid":false,"given":"Gun Hwan","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of System Semiconductor Engineering Yonsei University  Seoul Republic of Korea"},{"name":"Department of Materials Science and Engineering Yonsei University  Seoul Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,9,29]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010026\u201070171\u20102"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1147\/rd.524.0449"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1116\/1.4889999"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.29"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010020\u20100655\u2010z"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1147\/rd.524.0439"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0275098"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598\u2010019\u201056768\u20102"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.21.1450"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1007\/s40820\u2010023\u201001289\u2010x"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2773688"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010020\u201018382\u2010z"},{"key":"e_1_2_8_14_1","doi-asserted-by":"crossref","unstructured":"H. Y.Cheng W. C.Chien andI. T.Kuo \u201cUltra\u2010High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory \u201d in2018 IEEE International Electron Devices Meeting (IEDM)(IEEE 2018) 37.3.1\u201337.3.4 https:\/\/doi.org\/10.1109\/IEDM.2018.8614580.","DOI":"10.1109\/IEDM.2018.8614580"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2023.3252491"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202408028"},{"key":"e_1_2_8_17_1","doi-asserted-by":"crossref","unstructured":"S.Hong H.Choi andJ.Park \u201cExtremely High Performance High Density 20\u00a0nm Self\u2010Selecting Cross\u2010Point Memory for Compute Express Link \u201d in2022 International Electron Devices Meeting (IEDM)(IEEE 2022) 18.6.1 https:\/\/doi.org\/10.1109\/IEDM45625.2022.10019415.","DOI":"10.1109\/IEDM45625.2022.10019415"},{"key":"e_1_2_8_18_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mser.2025.101169"},{"key":"e_1_2_8_19_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202400665"},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598\u2010017\u201008251\u2010z"},{"key":"e_1_2_8_21_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598\u2010018\u201037717\u2010x"},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202404035"},{"key":"e_1_2_8_23_1","doi-asserted-by":"crossref","unstructured":"I.\u2010M.Park K.Lee andJ.\u2010H.Park \u201cEnhanced Endurance Characteristics in High Performance 16\u00a0nm Selector Only Memory (SOM) \u201d in2023 International Electron Devices Meeting (IEDM)(IEEE 2023) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM45741.2023.10413748.","DOI":"10.1109\/IEDM45741.2023.10413748"},{"key":"e_1_2_8_24_1","doi-asserted-by":"crossref","unstructured":"T.Ravsher R.Degraeve andD.Garbin \u201cComprehensive Performance and Reliability Assessment of Se\u2010Based Selector\u2010Only Memory \u201d in2024 IEEE International Reliability Physics Symposium (IRPS)(IEEE 2024) 7A.5\u20131\u20137A.5\u20139 https:\/\/doi.org\/10.1109\/IRPS48228.2024.10529450.","DOI":"10.1109\/IRPS48228.2024.10529450"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2020.2969962"},{"key":"e_1_2_8_26_1","doi-asserted-by":"publisher","DOI":"10.1039\/d6tc00505e"},{"key":"e_1_2_8_27_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmst.2025.09.005"},{"key":"e_1_2_8_28_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2024.3495778"},{"key":"e_1_2_8_29_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jallcom.2025.181079"},{"key":"e_1_2_8_30_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2026.166616"},{"key":"e_1_2_8_31_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2024.3378221"},{"key":"e_1_2_8_32_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598\u2010024\u201073131\u20102"},{"key":"e_1_2_8_33_1","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2025.3557732"},{"key":"e_1_2_8_34_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.jmst.2025.06.023"},{"key":"e_1_2_8_35_1","doi-asserted-by":"publisher","DOI":"10.1016\/0022\u20103093(83)90424\u20106"},{"key":"e_1_2_8_36_1","doi-asserted-by":"publisher","DOI":"10.1007\/s00339\u2010025\u201008939\u20104"},{"key":"e_1_2_8_37_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2022.154921"},{"key":"e_1_2_8_38_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2236216"},{"key":"e_1_2_8_39_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361\u20106528\/ab8668"},{"key":"e_1_2_8_40_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.202100038"},{"key":"e_1_2_8_41_1","doi-asserted-by":"publisher","DOI":"10.1039\/D6MH00158K"},{"key":"e_1_2_8_42_1","doi-asserted-by":"publisher","DOI":"10.3390\/nano12172898"},{"key":"e_1_2_8_43_1","doi-asserted-by":"publisher","DOI":"10.1111\/jace.15512"},{"key":"e_1_2_8_44_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep07099"},{"key":"e_1_2_8_45_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2025.3598975"},{"key":"e_1_2_8_46_1","doi-asserted-by":"crossref","unstructured":"J.Lee Y.Seo O.Kwon L.Jung andH.Hwang \u201cHybrid\u2010Stacked Sb\u2010based Selector\u2010Only Memory With Large Memory Window (>1.3\u00a0V) and Excellent Endurance (>10 10) via Decoupled Memory and Selector Functions \u201d in2025 IEEE International Electron Devices Meeting (IEDM)(IEEE 2025) 1\u20134 https:\/\/doi.org\/10.1109\/IEDM50572.2025.11353804.","DOI":"10.1109\/IEDM50572.2025.11353804"},{"key":"e_1_2_8_47_1","doi-asserted-by":"publisher","DOI":"10.1002\/aelm.202201224"},{"key":"e_1_2_8_48_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010021\u201020955\u20105"},{"key":"e_1_2_8_49_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2025.165576"},{"key":"e_1_2_8_50_1","doi-asserted-by":"crossref","unstructured":"M.Choi H.\u2010J.Sung andJ.Park \u201cDifferences in Operational Mechanisms of As\u2010 and Sb\u2010Based Selector Only Memory for Emerging 3DXP Architecture \u201d in2025 Symposium on VLSI Technology and Circuits(IEEE 2025) T14 https:\/\/doi.org\/10.23919\/VLSITechnologyandCir65189.2025.11074807.","DOI":"10.23919\/VLSITechnologyandCir65189.2025.11074807"},{"key":"e_1_2_8_51_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4738746"},{"key":"e_1_2_8_52_1","doi-asserted-by":"publisher","DOI":"10.1080\/14786437108216365"},{"key":"e_1_2_8_53_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1719264"},{"key":"e_1_2_8_54_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aba0893"},{"key":"e_1_2_8_55_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.2c19275"},{"key":"e_1_2_8_56_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.joule.2024.10.006"},{"key":"e_1_2_8_57_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1633982"},{"key":"e_1_2_8_58_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41560\u2010021\u201000949\u20109"},{"key":"e_1_2_8_59_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202531109"}],"container-title":["Advanced Science"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/advs.78092","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/advs.78092","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/advs.78092","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T04:50:51Z","timestamp":1790743851000},"score":1,"resource":{"primary":{"URL":"https:\/\/advanced.onlinelibrary.wiley.com\/doi\/10.1002\/advs.78092"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,29]]},"references-count":58,"alternative-id":["10.1002\/advs.78092"],"URL":"https:\/\/doi.org\/10.1002\/advs.78092","archive":["Portico"],"relation":{},"ISSN":["2198-3844","2198-3844"],"issn-type":[{"value":"2198-3844","type":"print"},{"value":"2198-3844","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,29]]},"assertion":[{"value":"2026-07-03","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-24","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-29","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e78092"}}