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Among semiconductor photoabsorbers, black silicon (b\u2010Si) is particularly attractive because its micro\u2010\/nanostructured surface enables ultralow reflectance, broadband light absorption, a large electrode\u2013electrolyte interfacial area, and versatile integration of catalysts and protective layers. These characteristics allow b\u2010Si to combine effective photon management with interfacial reaction engineering, making it relevant to a broad range of PEC processes. This review first introduces the fundamental characteristics of b\u2010Si and summarizes representative fabrication methods, with emphasis on the relationships among processing, morphology, and physicochemical properties. It then examines how these properties affect PEC water splitting, nitrate reduction, nitrogen reduction, and carbon dioxide reduction. 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