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Their practical value, however, depends on the complete device pathway, not coupling strength alone. This Review evaluates materials, switching mechanisms, and devices against these requirements, distinguishing measured performance from projected targets. We compare three magnetoelectric random\u2010access memory (MeRAM) routes with ferroelectric RAM and spin\u2010transfer torque magnetic RAM, and assess magnetoelectric spin\u2013orbit (MESO) logic alongside complementary metal\u2010oxide\u2010semiconductor (CMOS) technology and current\u2010driven spintronics. MeRAM combines electric\u2010field writing, magnetic storage, and nondestructive readout, with prospects for low write energy and closer memory\u2013logic integration. However, no integrated device has yet combined these benefits with competitive speed, retention, endurance, read margin, and density. For magnetoelectric logic, projected low\u2010voltage, non\u2010volatile operation has yet to be matched by experimental demonstrations of the full conversion path, gain and fan\u2010out. Results from BiFeO\n                    <jats:sub>3<\/jats:sub>\n                    , room\u2010temperature hexaferrites and other platforms identify deterministic switching, interface quality and thin\u2010film integration as central to closing the gap between projections and experiments. Magnetoelectric devices are therefore more likely to complement CMOS than replace it, particularly in logic\u2010in\u2010memory, compute\u2010near\u2010memory and normally\u2010off systems, where non\u2010volatility and reduced data movement could support next\u2010generation ultralow\u2010power electronics.\n                  <\/jats:p>","DOI":"10.1002\/advs.78344","type":"journal-article","created":{"date-parts":[[2026,10,18]],"date-time":"2026-10-18T14:53:41Z","timestamp":1792335221000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Magnetoelectric Multiferroics for the Next\u2010Generation Ultralow\u2010Power Electronics"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3668-0197","authenticated-orcid":false,"given":"Yang","family":"Liu","sequence":"first","affiliation":[{"name":"Materials and Manufacturing Futures Institute School of Materials Science and Engineering The University of 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