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BiTe exhibiting strong spin\u2010orbit coupling peaks <jats:italic>ZT<\/jats:italic> at 600\u2005K. Herein, we discover the synergy effect of Sb doping in BiTe that eliminates the detrimental band inversion and leads to an overlap of conduction band (CB) and valence band that significantly increases the <jats:italic>S<\/jats:italic> from 33 to 124\u2005\u03bcV\u2009K<jats:sup>\u22121<\/jats:sup>. In addition, this effect enhances the <jats:italic>\u03bc<\/jats:italic> from 58 to 92\u2005cm<jats:sup>2<\/jats:sup>\u2005V<jats:sup>\u22121<\/jats:sup>\u2009s<jats:sup>\u22121<\/jats:sup> owing to the sharp increase in the CB slope along the \u0393\u2010A in the first Brillouin zone. Furthermore, Sb doping increases the anharmonicity, shortens the phonon lifetime and lowers <jats:italic>\u03ba<\/jats:italic><jats:sub>lat<\/jats:sub>. Finally, Se\/Sb codoping further optimizes the <jats:italic>ZT<\/jats:italic> to 0.6 at 300\u2005K, suggesting that Bi<jats:sub>0.6<\/jats:sub>Sb<jats:sub>0.4<\/jats:sub>Te<jats:sub>1\u2212<jats:italic>y<\/jats:italic><\/jats:sub>Se<jats:sub><jats:italic>y<\/jats:italic><\/jats:sub> is a potential room\u2010temperature TE material.<\/jats:p>","DOI":"10.1002\/anie.202218019","type":"journal-article","created":{"date-parts":[[2023,2,8]],"date-time":"2023-02-08T03:53:14Z","timestamp":1675828394000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":12,"title":["Room\u2010Temperature High\u2010Performance Thermoelectric Bi<sub>0.6<\/sub>Sb<sub>0.4<\/sub>Te: Elimination of Detrimental Band Inversion in BiTe"],"prefix":"10.1002","volume":"62","author":[{"given":"Fei","family":"Jia","sequence":"first","affiliation":[{"name":"Center for Advanced Materials Research Beijing Normal University, Zhuhai  Zhuhai 519087 P. R. 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