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Volatile memristors provide a promising biomimetic alternative; however, their performance is often limited by uncontrolled ionic dynamics in disordered oxides. Here, we report two\u2010dimensional SnS\n                    <jats:sub>2<\/jats:sub>\n                    interlayers as an effective platform for vacancy\u2010guided ion migration in oxide\u2010based diffusive memristors. A solution\u2010processed SnS\n                    <jats:sub>2<\/jats:sub>\n                    layer with tunable sulfur vacancy density is introduced into an Ag\/TaO\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    \/SnS\n                    <jats:sub>2<\/jats:sub>\n                    \/ITO heterostructure to regulate filament formation. Under electrical bias, sulfur vacancies of SnS\n                    <jats:sub>2<\/jats:sub>\n                    layer locally enhance the electric field and provide deterministic pathways for Ag\n                    <jats:sup>+<\/jats:sup>\n                    migration. This enables atomic\u2010scale confinement of conductive filaments, resulting in highly uniform threshold switching (variability \u2248 10.9%), ultralow switching energy (\u223c 10.9 pJ), and stable operation over 5,000 cycles. Furthermore, modulation of the vacancy landscape allows dynamic reconfiguration of switching polarity, enabling a transition from unidirectional to bidirectional volatile switching. Beyond improved electrical performance, the devices reproduce key nociceptive behaviors and can be integrated into an 8 \u00d7 8 crossbar array to achieve spatially resolved perception of mechanical stimuli.\n                  <\/jats:p>","DOI":"10.1002\/anie.6605459","type":"journal-article","created":{"date-parts":[[2026,9,21]],"date-time":"2026-09-21T15:38:22Z","timestamp":1790005102000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Two\u2010Dimensional SnS\n                    <sub>2<\/sub>\n                    Interlayers Enable Vacancy\u2010Guided Ion Migration for Stable Diffusive Memristors and Bioinspired Nociception"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0008-6758-3198","authenticated-orcid":false,"given":"Jingzhou","family":"Shi","sequence":"first","affiliation":[{"name":"School of Integrated Circuits Shandong University  Jinan P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zening","family":"Gao","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits Shandong University  Jinan P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-3263-7818","authenticated-orcid":false,"given":"Xinming","family":"Ma","sequence":"additional","affiliation":[{"name":"Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion Department of Applied Chemistry State Key Laboratory of Crystal Materials Tianjin Key Laboratory of Functional Crystal Materials Institute of Functional Crystals School of Integrated Circuit Science and Engineering Tianjin University of Technology  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3021-8452","authenticated-orcid":false,"given":"Gangri","family":"Cai","sequence":"additional","affiliation":[{"name":"Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion Department of Applied Chemistry State Key Laboratory of Crystal Materials Tianjin Key Laboratory of Functional Crystal Materials Institute of Functional Crystals School of Integrated Circuit Science and Engineering Tianjin University of Technology  Tianjin P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Xianjin","family":"Feng","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits Shandong University  Jinan P. R. 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