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Both <jats:bold>FAZO\u20101<\/jats:bold> and <jats:bold>FAZO\u20102<\/jats:bold> had a lower molecular polarity, whereas <jats:bold>FAZO\u20103<\/jats:bold> had a higher polarity. The fabricated indium\u2013tin oxide (ITO)\/<jats:bold>FAZO\u20101<\/jats:bold>\/Al (Au) and ITO\/<jats:bold>FAZO\u20102<\/jats:bold>\/Al (Au) memory devices both exhibited volatile static random access memory (SRAM) behavior, whereas the ITO\/<jats:bold>FAZO\u20103<\/jats:bold>\/Al (Au) device showed nonvolatile ternary write\u2010once\u2010read\u2010many\u2010times (WORM) behavior. It should be noted that the reproducibility of these devices was considerably high, which is significant for practical application in memory devices. In addition, the different memory performances of the three active materials were determined to be attributable to the stability of electric\u2010field\u2010induced charge\u2010transfer complexes. Therefore, the switching memory behavior could be tuned by adjusting the molecular polarity.<\/jats:p>","DOI":"10.1002\/asia.201501030","type":"journal-article","created":{"date-parts":[[2015,11,4]],"date-time":"2015-11-04T05:54:54Z","timestamp":1446616494000},"page":"512-519","source":"Crossref","is-referenced-by-count":11,"title":["Improving Memory Performances by Adjusting the Symmetry and Polarity of <i>O<\/i>\u2010Fluoroazobenzene\u2010Based Molecules"],"prefix":"10.1002","volume":"11","author":[{"given":"Quan","family":"Liu","sequence":"first","affiliation":[{"name":"College of Chemistry, Chemical Engineering and Materials Science Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University  Suzhou 215123 P. R. 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