{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,9]],"date-time":"2026-10-09T18:07:07Z","timestamp":1791569227018,"version":"4.3.4"},"reference-count":38,"publisher":"Wiley","issue":"9","license":[{"start":{"date-parts":[[2025,9,20]],"date-time":"2025-09-20T00:00:00Z","timestamp":1758326400000},"content-version":"vor","delay-in-days":19,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2025,9,1]],"date-time":"2025-09-01T00:00:00Z","timestamp":1756684800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["analyticalsciencejournals.onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Luminescence"],"published-print":{"date-parts":[[2025,9]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    The increasing demand for near\u2010infrared phosphor\u2010converted LEDs (NIR pc\u2010LEDs) has spurred extensive research on broadband NIR phosphors. A series of Cr\n                    <jats:sup>3+<\/jats:sup>\n                    \u2010doped ZnWO\n                    <jats:sub>4<\/jats:sub>\n                    phosphors exhibiting broadband NIR emission was synthesized via a high\u2010temperature solid\u2010phase method. The photoluminescence (PL) excitation (PLE) spectrum of ZnWO\n                    <jats:sub>4<\/jats:sub>\n                    : Cr\n                    <jats:sup>3+<\/jats:sup>\n                    exhibits two absorption bands in the 200\u2013400\u2009nm and 400\u2013600\u2009nm ranges, which match well with near\u2010ultraviolet and blue LED chips. Under excitation, the PL spectrum shows a broad NIR emission extending from 700 to 1400\u2009nm, with a full width at half maximum (FWHM) of approximately 210\u2009nm. The internal quantum efficiency (IQE) was measured to be 55.36%. At 373\u2009K, the integrated emission intensity of ZnWO\n                    <jats:sub>4<\/jats:sub>\n                    : 0.05Cr\n                    <jats:sup>3+<\/jats:sup>\n                    is about 47.5% of that at room temperature (RT). Additionally, a prototype NIR pc\u2010LED device was fabricated by embedding the ZnWO\n                    <jats:sub>4<\/jats:sub>\n                    : 0.05Cr\n                    <jats:sup>3+<\/jats:sup>\n                    phosphor into a silicone matrix and coupling it with a 450\u2010nm blue LED chip. The device delivered an output power of 17.12\u2009mW at a 140\u2010mA driving current and a photoelectric conversion efficiency of 14.42% at 20\u2009mA. These results demonstrate the promising potential of this NIR pc\u2010LED for practical applications such as night vision and vein imaging.\n                  <\/jats:p>","DOI":"10.1002\/bio.70320","type":"journal-article","created":{"date-parts":[[2025,9,20]],"date-time":"2025-09-20T12:10:05Z","timestamp":1758370205000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Broadband and High Efficiency Near\u2010Infrared Emission in Cr\n                    <sup>3+<\/sup>\n                    \u2010Doped ZnWO\n                    <sub>4<\/sub>\n                    Phosphors for Spectroscopic Applications"],"prefix":"10.1002","volume":"40","author":[{"given":"Jiamin","family":"Li","sequence":"first","affiliation":[{"name":"Key Laboratory of Rare Earth Optoelectronic Materials and Devices of Zhejiang Province, Institute of Optoelectronic Materials and Devices China Jiliang University  Hangzhou 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