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They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds <jats:bold>5<\/jats:bold> and <jats:bold>6<\/jats:bold> were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin\u2010rich ITOs homogeneously dispersed in a tin oxide\/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy\u2010dispersive X\u2010ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin\u2010containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2<jats:italic>\u03b8<\/jats:italic> values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In<jats:sub>2<\/jats:sub>O<jats:sub>3<\/jats:sub> lattice and partially occupied In<jats:sup>3+<\/jats:sup> sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin\u2010film field\u2010effect transistors (FETs) were fabricated by spin\u2010coating of silicon wafers with solutions of <jats:bold>5<\/jats:bold> in toluene and subsequent calcination under dry air (25\u2013700\u2009\u00b0C). The FETs prepared with precursor <jats:bold>5<\/jats:bold> exhibited excellent performances, as shown by a charge\u2010carrier mobility of 6.36\u00d710<jats:sup>\u22121<\/jats:sup>\u2005cm<jats:sup>2<\/jats:sup>\u2009V<jats:sup>\u22121<\/jats:sup>\u2009s (calcination at 250\u2009\u00b0C) and an on\/off current ratio of 10<jats:sup>6<\/jats:sup>.<\/jats:p>","DOI":"10.1002\/chem.201103594","type":"journal-article","created":{"date-parts":[[2012,5,1]],"date-time":"2012-05-01T22:52:21Z","timestamp":1335912741000},"page":"7766-7779","source":"Crossref","is-referenced-by-count":20,"title":["Heterotermetallic Indium Lithium Halostannates: Low\u2010Temperature Single\u2010Source Precursors for Tin\u2010Rich Indium Tin Oxides and Their Application for Thin\u2010Film Transistors"],"prefix":"10.1002","volume":"18","author":[{"given":"Kerim","family":"Samedov","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yilmaz","family":"Aksu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Matthias","family":"Driess","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"311","published-online":{"date-parts":[[2012,4,30]]},"reference":[{"key":"e_1_2_6_1_2","doi-asserted-by":"publisher","DOI":"10.1016\/0040-6090(83)90256-0"},{"key":"e_1_2_6_2_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.276.5321.2009"},{"key":"e_1_2_6_3_2","doi-asserted-by":"publisher","DOI":"10.1021\/la0255828"},{"key":"e_1_2_6_4_2","doi-asserted-by":"publisher","DOI":"10.1021\/cm0617283"},{"key":"e_1_2_6_5_2","unstructured":"\u00a0"},{"key":"e_1_2_6_6_2","doi-asserted-by":"crossref","first-page":"27","DOI":"10.1149\/2.F07942IF","volume":"3","author":"Ziegler J. 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