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In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well\u2010characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth\u2010based subiodides and recently succeeded in synthesizing a new compound Bi<jats:sub>12<\/jats:sub>Rh<jats:sub>3<\/jats:sub>Sn<jats:sub>3<\/jats:sub>I<jats:sub>9<\/jats:sub>, which is structurally closely related to Bi<jats:sub>14<\/jats:sub>Rh<jats:sub>3<\/jats:sub>I<jats:sub>9<\/jats:sub> \u2013 a stable, layered material. In fact, Bi<jats:sub>14<\/jats:sub>Rh<jats:sub>3<\/jats:sub>I<jats:sub>9<\/jats:sub> is the first experimentally supported weak 3D TI. Both structures are composed of well\u2010defined intermetallic layers of <jats:sub>\u221e<\/jats:sub><jats:sup>2<\/jats:sup>[(Bi<jats:sub>4<\/jats:sub>Rh)<jats:sub>3<\/jats:sub>I]<jats:sup>2+<\/jats:sup> with topologically protected electronic edge\u2010states. The fundamental difference between Bi<jats:sub>14<\/jats:sub>Rh<jats:sub>3<\/jats:sub>I<jats:sub>9<\/jats:sub> and Bi<jats:sub>12<\/jats:sub>Rh<jats:sub>3<\/jats:sub>Sn<jats:sub>3<\/jats:sub>I<jats:sub>9<\/jats:sub> lies in the composition and the arrangement of the anionic spacer. While the intermetallic 2D TI layers in Bi<jats:sub>14<\/jats:sub>Rh<jats:sub>3<\/jats:sub>I<jats:sub>9<\/jats:sub> are isolated by <jats:sub>\u221e<\/jats:sub><jats:sup>1<\/jats:sup>[Bi<jats:sub>2<\/jats:sub>I<jats:sub>8<\/jats:sub>]<jats:sup>2\u2212<\/jats:sup> chains, the isoelectronic substitution of bismuth(III) with tin(II) leads to <jats:sub>\u221e<\/jats:sub><jats:sup>2<\/jats:sup>[Sn<jats:sub>3<\/jats:sub>I<jats:sub>8<\/jats:sub>]<jats:sup>2\u2212<\/jats:sup> layers as anionic spacers. First transport experiments support the 2D character of this material class and revealed metallic conductivity.<\/jats:p>","DOI":"10.1002\/chem.202001953","type":"journal-article","created":{"date-parts":[[2020,6,3]],"date-time":"2020-06-03T07:07:32Z","timestamp":1591168052000},"page":"15549-15557","update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["The Weak 3D Topological Insulator Bi<sub>12<\/sub>Rh<sub>3<\/sub>Sn<sub>3<\/sub>I<sub>9<\/sub>"],"prefix":"10.1002","volume":"26","author":[{"given":"Mai","family":"L\u00ea Anh","sequence":"first","affiliation":[{"name":"Faculty of Chemistry and Food Chemistry Technische Universit\u00e4t Dresden  01062 Dresden Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Martin","family":"Kaiser","sequence":"additional","affiliation":[{"name":"Faculty of Chemistry and Food Chemistry Technische Universit\u00e4t Dresden  01062 Dresden 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