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S\u2010vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8\u2009% was reached under 1\u2005sun illumination from the AZO side. The well\u2010preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate\u2010type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO<jats:sub>2<\/jats:sub>\u2010enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. 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