{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,29]],"date-time":"2026-08-29T08:16:50Z","timestamp":1787991410735,"version":"build-2784847793"},"reference-count":50,"publisher":"Wiley","issue":"13","license":[{"start":{"date-parts":[[2026,7,7]],"date-time":"2026-07-07T00:00:00Z","timestamp":1783382400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,7,7]],"date-time":"2026-07-07T00:00:00Z","timestamp":1783382400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["2025ZD0616201"],"award-info":[{"award-number":["2025ZD0616201"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Nanophotonics"],"published-print":{"date-parts":[[2026,7,13]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>GaInN\/GaN multi\u2010quantum shell (MQS) nanowires (NWs) are promising candidates for high\u2010efficiency microscale and nanoscale light\u2010emitting diodes (LEDs), offering reduced efficiency losses from the quantum\u2010confined Stark effect and nonradiative recombination. However, the three\u2010dimensional NW geometry complicates electrode deposition, leading to nonuniform current injection and emission variations. Here, we demonstrated enhanced current injection in NW\u2010LEDs using a conformal aluminum\u2010doped zinc oxide (AZO) film deposited via atomic layer deposition (ALD). Finite element simulations revealed that extended p\u2010type electrode coverage can promote both axial and lateral current injection from the sidewalls, enhancing radiative recombination across the (0001), (101), and (100) planes. We systematically compared device fabrication processes, transparent electrode morphologies, and optoelectronic performance using AZO and indium tin oxide (ITO) electrodes deposited via ALD and sputtering. Cross\u2010sectional morphology characterization confirmed minimal thickness variation of ALD\u2010deposited AZO, enabling uniform sidewall coverage and deposition in the regions between NWs, which is challenging for sputtered ITO. Uniform AZO deposition by ALD improved light output by a factor of 1.2 at an injection current of 30\u00a0mA. These results demonstrate that conformal AZO enables uniform transparent electrodes, promotes efficient current injection throughout the NWs, and represents a promising alternative to ITO in NW\u2010LEDs.<\/jats:p>","DOI":"10.1002\/nap2.70195","type":"journal-article","created":{"date-parts":[[2026,7,8]],"date-time":"2026-07-08T04:25:36Z","timestamp":1783484736000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Promoted Current Injection in GaInN\/GaN Multi\u2010Quantum Nanowire\u2010Based LEDs Coated With AZO Using Atomic Layer Deposition"],"prefix":"10.1002","volume":"15","author":[{"given":"Soma","family":"Inaba","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering Meijo University  Nagoya Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mengtong","family":"Wang","sequence":"additional","affiliation":[{"name":"Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics Xiamen University  Xiamen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6214-4024","authenticated-orcid":false,"given":"Weifang","family":"Lu","sequence":"additional","affiliation":[{"name":"Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics Xiamen University  Xiamen China"},{"name":"Future Display Institute in Xiamen  Xiamen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kazuma","family":"Ito","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Meijo University  Nagoya Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Sena","family":"Miura","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Meijo University  Nagoya Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yiyu","family":"Ou","sequence":"additional","affiliation":[{"name":"Department of Photonics Engineering Technical University of Denmark  Kgs. Lyngby Denmark"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4108-6440","authenticated-orcid":false,"given":"Dong\u2010Pyo","family":"Han","sequence":"additional","affiliation":[{"name":"Display &amp; Semiconductor Engineering, School of Electrical Engineering Pukyong National University (PKNU)  Busan Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9876-2913","authenticated-orcid":false,"given":"Kai","family":"Huang","sequence":"additional","affiliation":[{"name":"Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics Xiamen University  Xiamen China"},{"name":"Future Display Institute in Xiamen  Xiamen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Motoaki","family":"Iwaya","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Meijo University  Nagoya 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