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Here, the alignment of highly ordered and dense silicon (Si) NW arrays at anisotropically etched micro\u2010engraved structures is demonstrated using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre\u2010defined structures, and the assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays are subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As a proof\u2010of\u2010concept, flexible back\u2010gated NW field\u2010effect transistors (FETs) are fabricated. The fabricated FETs have an effective hole mobility of 17.1 cm<jats:sup>2<\/jats:sup>\u00b7V<jats:sup>\u22121<\/jats:sup>\u00b7s<jats:sup>\u22121<\/jats:sup> and an on\/off ratio of \u223c2.6 \u00d7 10<jats:sup>5<\/jats:sup>.<\/jats:p>","DOI":"10.1002\/smll.201102367","type":"journal-article","created":{"date-parts":[[2012,3,19]],"date-time":"2012-03-19T07:52:55Z","timestamp":1332143575000},"page":"1614-1621","source":"Crossref","is-referenced-by-count":15,"title":["Direct Gravure Printing of Silicon Nanowires Using Entropic Attraction Forces"],"prefix":"10.1002","volume":"8","author":[{"given":"Jungmok","family":"Seo","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyonik","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seulah","family":"Lee","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tae 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