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Major properties of CsPbX<jats:sub>3<\/jats:sub> QDs include the positive photoconductivity (PPC) and the defect tolerance of the in\u2010band trap states. Here it is reported that when hybridizing CsPbX<jats:sub>3<\/jats:sub> QDs with indium tin oxide (ITO) nanocrystals to form CsPbX<jats:sub>3<\/jats:sub>\u2010ITO nano\u2010heterojunctions (NHJs), a voltage tuned photoresponse\u2014from PPC to negative photoconductivity (NPC) transform\u2014is achieved in lateral drain\u2010source structured ITO\/CsPbX<jats:sub>3<\/jats:sub>\u2010ITO\u2010NHJs\/ITO devices. A model combining exciton, charge separation, transport, and most critical the voltage driven electron filling of the in\u2010band trap states with drain\u2013source voltage (<jats:italic>V<\/jats:italic><jats:sub>DS<\/jats:sub>) above a threshold, is proposed to understand this unusual PPC\u2010NPC transform mechanism, which is different from that of any known nanomaterial system. This finding exhibits potentials for developing devices such as photodetectors, optoelectronic switches, and memories.<\/jats:p>","DOI":"10.1002\/smll.202101403","type":"journal-article","created":{"date-parts":[[2021,6,9]],"date-time":"2021-06-09T16:38:07Z","timestamp":1623256687000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":32,"title":["CsPbX<sub>3<\/sub>\u2010ITO (X <b>=<\/b> Cl, Br, I) Nano\u2010Heterojunctions: Voltage Tuned Positive to Negative Photoresponse"],"prefix":"10.1002","volume":"17","author":[{"given":"Qiqian","family":"He","sequence":"first","affiliation":[{"name":"Jiangsu Key Laboratory of New Power Batteries Jiangsu Collaborative Innovation Center of Biomedical Functional Materials School of Chemistry and Materials Science Nanjing Normal University  Nanjing 210046 P. R. 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