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To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III\u2010nitrides, metal oxides, and 2D materials, using 2D boron nitride (BN)\u2010on\u2010sapphire templates are demonstrated. The van der Waals (vdW) BN layer, in this case, acts as a preferred mechanical release layer for precise separation at the substrate\u2013film interface and leaves a smooth surface suitable for vdW bonding. A tensilely stressed Ni layer sputtered on top of the film induces controlled spalling fracture that propagates at the BN\/sapphire interface. By incorporating controlled spalling, the process yield and sensitivity are greatly improved, owed to the greater fracture energy provided by the stressed metal layer relative to a soft tape or rubber stamp. With stress playing a critical role in this process, the influence of residual stress on detrimental cracking and bowing is investigated. Additionally, a back\u2010end selected area lift\u2010off technique is developed which allows for isolation and transfer of individual devices or arbitrary shapes.<\/jats:p>","DOI":"10.1002\/smll.202102668","type":"journal-article","created":{"date-parts":[[2021,9,20]],"date-time":"2021-09-20T07:14:19Z","timestamp":1632122059000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":17,"title":["Spalling\u2010Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer"],"prefix":"10.1002","volume":"17","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3928-3402","authenticated-orcid":false,"given":"Eric W.","family":"Blanton","sequence":"first","affiliation":[{"name":"KBR  Beavercreek OH 45431 USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Michael J.","family":"Motala","sequence":"additional","affiliation":[{"name":"UES  Dayton OH 45432 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