{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,1]],"date-time":"2026-09-01T14:24:39Z","timestamp":1788272679986,"version":"build-2803163510"},"reference-count":59,"publisher":"Wiley","issue":"52","license":[{"start":{"date-parts":[[2021,10,11]],"date-time":"2021-10-11T00:00:00Z","timestamp":1633910400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2021,12]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>Non\u2010toxic InP\u2010based nanocrystals have been developed for promising candidates for commercial optoelectronic applications and they still require further improvement on photophysical properties, compared to Cd\u2010based quantum dots (QDs), for better device efficiency and long\u2010term stability. It is, therefore, essential to understand the precise mechanism of carrier trapping even in the state\u2010of\u2010the\u2010art InP\u2010based QD with near\u2010unity luminescence. Here, it is shown that using time\u2010resolved spectroscopic measurements of systematically size\u2010controlled InP\/ZnSe\/ZnS core\/shell\/shell QDs with the quantum yield close to one, carrier trapping decreases with increasing the energy difference between band\u2010edge and trap states, indicating that the process follows the energy gap law, well known in molecular photochemistry for nonradiative internal conversion between two electronic states. Similar to the molecular view of the energy gap law, it is found that the energy gap between the band\u2010edge and trap states is closely associated with ZnSe phonons that assist carrier trapping into defects in highly luminescent InP\/ZnSe\/ZnS QDs. These findings represent a striking departure from the generally accepted view of carrier trapping mechanism in QDs in the Marcus normal region, providing a step forward understanding how excitons in nanocrystals interact with traps, and offering valuable guidance for making highly efficient and stable InP\u2010based QDs.<\/jats:p>","DOI":"10.1002\/smll.202102792","type":"journal-article","created":{"date-parts":[[2021,10,15]],"date-time":"2021-10-15T07:38:32Z","timestamp":1634283512000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":45,"title":["Increasing the Energy Gap between Band\u2010Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP\/ZnSe\/ZnS Quantum Dots"],"prefix":"10.1002","volume":"17","author":[{"given":"Young Mo","family":"Sung","sequence":"first","affiliation":[{"name":"Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd.  130 Samsung\u2010ro Suwon 16678 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