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Here, this method is demonstrated to work even at low deposition temperatures and can produce highly stable and conformal thin films, fulfilling the indispensable prerequisites of today's 3D microelectronics and other potential industrial applications. This new ALD\/MLD process is developed for Zn\u2010organic thin films grown from non\u2010pyrophoric bis\u20103\u2010(\n                    <jats:italic>N,N<\/jats:italic>\n                    \u2010dimethylamino)propyl zinc [Zn(DMP)\n                    <jats:sub>2<\/jats:sub>\n                    ] and 1,4\u2010benzene dithiol (BDT) precursors. This process yields air\u2010stable Zn\u2010BDT films with appreciably high growth per cycle (GPC) of 4.5 \u00c5 at 60\u00a0\u00b0C. The Zn\/S ratio is determined at 0.5 with Rutherford backscattering spectrometry (RBS), in line with the anticipated (Zn\u2500S\u2500C\n                    <jats:sub>6<\/jats:sub>\n                    H\n                    <jats:sub>6<\/jats:sub>\n                    \u2500S\u2500)\n                    <jats:sub>n<\/jats:sub>\n                    bonding scheme. The high degree of conformality is shown using lateral high\u2010aspect\u2010ratio (LHAR) test substrates; scanning electron microscopy (SEM) analysis shows that the film penetration depth (PD) into the LHAR structure with cavity height of 500\u00a0nm is over 200\u00a0\u00b5m (i.e., aspect\u2010ratio of 400). It is anticipated that the electrically insulating metal\u2010organic Zn\u2010BDT thin films grown via the solvent\u2010free ALD\/MLD technique, can be excellent barrier layers for temperature\u2010sensitive and flexible electronic devices.\n                  <\/jats:p>","DOI":"10.1002\/smll.202402608","type":"journal-article","created":{"date-parts":[[2024,6,9]],"date-time":"2024-06-09T22:05:43Z","timestamp":1717970743000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["Conformal Zn\u2010Benzene Dithiol Thin Films for Temperature\u2010Sensitive Electronics Grown via Industry\u2010Feasible Atomic\/Molecular Layer Deposition Technique"],"prefix":"10.1002","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9978-210X","authenticated-orcid":false,"given":"Anish","family":"Philip","sequence":"first","affiliation":[{"name":"Department of Chemistry and Materials Science Aalto University  Espoo FI\u201000076 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