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However, efficiently generating and fully harnessing orbital currents is a formidable challenge. In this study, an approach is presented that induces a colossal orbital current by gradient oxidation in Pt\/Ta to enhance spin\u2010orbit torque (SOT) and achieve high\u2010efficiency magnetization switching. The maximum efficiency of the SOT before and after the gradient oxidation of Ta is improved relative to that of Pt by \u2248600 and 1200%, respectively. The large SOT originates from the colossal orbital current because of the orbital Rashba\u2013Edelstein effect induced by the gradient oxidation of Ta. In addition, a large spin\u2010to\u2010charge conversion efficiency is observed in yttrium iron garnet\/Pt\/TaO<jats:sub>x<\/jats:sub> because of the inverse orbital Rashba\u2013Edelstein effect. Harnessing the orbital current can help effectively minimize the critical current density of the current\u2010induced magnetization switching to 2.26\u20131.08 \u00d7 10<jats:sup>6<\/jats:sup> A\u00a0cm<jats:sup>\u22122<\/jats:sup>, marking a 12\u2010fold reduction compared to that using Pt. This findings provide a new path for research on low\u2010dissipation spin\u2010orbit devices and improve the tunability of orbital current generation.<\/jats:p>","DOI":"10.1002\/smll.202403881","type":"journal-article","created":{"date-parts":[[2024,7,15]],"date-time":"2024-07-15T05:07:25Z","timestamp":1721020045000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Colossal Orbital Current Induced by Gradient Oxidation for High\u2010Efficiency Magnetization Switching"],"prefix":"10.1002","volume":"20","author":[{"given":"Xinkai","family":"Xu","sequence":"first","affiliation":[{"name":"School of Electronic Science and Engineering University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"},{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China  Chengdu 610054 P. R. 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