{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,19]],"date-time":"2026-08-19T19:58:49Z","timestamp":1787169529170,"version":"build-2736575974"},"reference-count":60,"publisher":"Wiley","issue":"50","license":[{"start":{"date-parts":[[2024,9,30]],"date-time":"2024-09-30T00:00:00Z","timestamp":1727654400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52201534"],"award-info":[{"award-number":["52201534"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2024,12]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    2D topological materials with magnetic ordering have become hot topics due to their nontrivial band topology and quantum states. In this work, the second\u2010order topological states and evolution of linear band crossing are successfully predicted utilizing the effective\n                    <jats:italic>k\u00b7 p<\/jats:italic>\n                    and tight binding models in the intrinsic ferromagnetic VI\n                    <jats:sub>3<\/jats:sub>\n                    monolayer under various effective Hubble interaction U\n                    <jats:sub>eff<\/jats:sub>\n                    . Upon inclusion of spin orbit coupling, a small bandgap (E\n                    <jats:sub>g<\/jats:sub>\n                    \u20101) of 12.7 meV is opened with a Chern invariant C = \u22121 at U\n                    <jats:sub>eff<\/jats:sub>\n                    = 0 eV. The E\n                    <jats:sub>g<\/jats:sub>\n                    \u20101 undergoes a transition from the non\u2010trivial state to trivial state at U\n                    <jats:sub>eff<\/jats:sub>\n                    = 0.80 eV, accompanied by the appearance of Dirac cone. Remarkably, the increase of U\n                    <jats:sub>eff<\/jats:sub>\n                    causes the band inversion and adjustment of crystal symmetry, resulting in two unreported coexisting\u00a0topological bandgaps (E\n                    <jats:sub>g<\/jats:sub>\n                    \u20102 and E\n                    <jats:sub>g<\/jats:sub>\n                    \u20103). Furthermore, a gapless node\u2010loop appears at U\n                    <jats:sub>eff<\/jats:sub>\n                    = 1.06 eV and disappears at U\n                    <jats:sub>eff<\/jats:sub>\n                    = 1.09 eV around \u0393 point. Moreover, for the first time, the existence of second\u2010order topological states with quantized corner fractional charges (e\/3) is also observed in the VI\n                    <jats:sub>3<\/jats:sub>\n                    monolayer at U\n                    <jats:sub>eff<\/jats:sub>\n                    \u22650.96 eV. These results make the VI\n                    <jats:sub>3<\/jats:sub>\n                    monolayer a compelling candidate for exploring topological devices.\n                  <\/jats:p>","DOI":"10.1002\/smll.202407232","type":"journal-article","created":{"date-parts":[[2024,9,30]],"date-time":"2024-09-30T05:04:19Z","timestamp":1727672659000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Multiple Topological Phases with Electronic Correlation in Intrinsic Ferromagnetic Semimetal VI\n                    <sub>3<\/sub>\n                    Monolayer"],"prefix":"10.1002","volume":"20","author":[{"given":"Xiaosong","family":"Zhao","sequence":"first","affiliation":[{"name":"Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education Tianjin Key Laboratory for Photoelectric Materials and Devices National Demonstration Center for Experimental Function Materials Education School of Material Science and Engineering Tianjin University of Technology  Tianjin 300384 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1678-7330","authenticated-orcid":false,"given":"Yukai","family":"An","sequence":"additional","affiliation":[{"name":"Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education Tianjin Key Laboratory for Photoelectric Materials and Devices National Demonstration Center for Experimental Function Materials Education School of Material Science and Engineering Tianjin University of Technology  Tianjin 300384 China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2024,9,30]]},"reference":[{"key":"e_1_2_8_1_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202309356"},{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.4c01008"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1039\/D3MH02250A"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1039\/D3TC03423B"},{"key":"e_1_2_8_5_1","first-page":"7","volume":"123","author":"Xu X. 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