{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,13]],"date-time":"2026-10-13T17:07:21Z","timestamp":1791911241754,"version":"4.3.4"},"reference-count":79,"publisher":"Wiley","issue":"25","license":[{"start":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T00:00:00Z","timestamp":1747267200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"funder":[{"DOI":"10.13039\/501100001691","name":"Japan Society for the Promotion of Science","doi-asserted-by":"publisher","award":["23K22803"],"award-info":[{"award-number":["23K22803"]}],"id":[{"id":"10.13039\/501100001691","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2025,6]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    MXenes have attracted attention in recent years owing to their 2D layered structures with various functionalities. To open a new application field for MXenes in the realm of electronic devices, such as ultrahigh\u2010integrated magnetic memory, a spin\u2013orbit torque (SOT) bilayer structure with MXene of Cr\n                    <jats:sub>2<\/jats:sub>\n                    N is developed: substrate\/\/Cr\n                    <jats:sub>2<\/jats:sub>\n                    N\/[Co\/Pt]\n                    <jats:sub>3<\/jats:sub>\n                    \/MgO using the magnetron sputtering technique. Field\u2010free current\u2010induced magnetization switching in the bilayer structure is demonstrated, regardless of the charge current directions with respect to the mirror symmetry lines of Cr\n                    <jats:sub>2<\/jats:sub>\n                    N crystal. This is a specific characteristic for the 2D MXene\u2010based SOT\u2010devices. As the SOT efficiency increases with increasing the Cr\n                    <jats:sub>2<\/jats:sub>\n                    N thickness, the first\u2010principles calculations predict an intrinsic orbital\u2010Hall conductivity with the dominant out\u2010of\u2010plane component, comparing to the spin\u2010Hall conductivity in the Cr\n                    <jats:sub>2<\/jats:sub>\n                    N. X\u2010ray magnetic circular dichroism reveals the out\u2010of\u2010plane uncompensated magnetic moment of Cr () in the Cr\n                    <jats:sub>2<\/jats:sub>\n                    N layer at the interface, induced by contact with the Co in the [Co\/Pt]\n                    <jats:sub>3<\/jats:sub>\n                    ferromagnetic layer. Therefore, the intrinsic bulk orbital\u2010Hall effect in MXene and the interfacial contribution such as spin\u2010filtering\u2010like effect owing to  are considered as possible major mechanisms for the unconventional out\u2010of\u2010plane SOT in the device, rather than a crystal symmetry and\/or an interlayer exchange coupling.\n                  <\/jats:p>","DOI":"10.1002\/smll.202500626","type":"journal-article","created":{"date-parts":[[2025,5,15]],"date-time":"2025-05-15T04:14:02Z","timestamp":1747282442000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Unconventional Spin\u2013Orbit Torques by 2D Multilayered MXenes for Future Nonvolatile Magnetic Memories"],"prefix":"10.1002","volume":"21","author":[{"given":"Prabhat","family":"Kumar","sequence":"first","affiliation":[{"name":"Research Center for Magnetic and Spintronic Materials National Institute for Materials Science (NIMS)  Sengen 1\u20102\u20101, Tsukuba Ibaraki 305\u20100047 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoshio","family":"Miura","sequence":"additional","affiliation":[{"name":"Research Center for Magnetic and Spintronic Materials National Institute for Materials Science (NIMS)  Sengen 1\u20102\u20101, Tsukuba Ibaraki 305\u20100047 Japan"},{"name":"Faculty of Electrical Engineering and Electronics Kyoto Institute of Technology  Hashikami\u2010cho, Matsugasaki, Sakyo\u2010ku Kyoto 606\u20108585 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yoshinori","family":"Kotani","sequence":"additional","affiliation":[{"name":"Photon Science Innovation Center (PhoSIC)  Aoba 468\u20101, Aramaki\u2010Aza, Aoba Sendai 980\u20100845 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Akiho","family":"Sumiyoshiya","sequence":"additional","affiliation":[{"name":"Photon Science Innovation Center (PhoSIC)  Aoba 468\u20101, Aramaki\u2010Aza, Aoba Sendai 980\u20100845 Japan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tetsuya","family":"Nakamura","sequence":"additional","affiliation":[{"name":"Photon Science Innovation Center (PhoSIC)  Aoba 468\u20101, Aramaki\u2010Aza, Aoba Sendai 980\u20100845 Japan"},{"name":"International Center for Synchrotron Radiation Innovation Smart (SRIS) Tohoku University.  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