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Here, W\n                    <jats:sub>1\u2212<\/jats:sub>\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    (TiO\n                    <jats:sub>2<\/jats:sub>\n                    )\n                    <jats:italic>\n                      <jats:sub>x<\/jats:sub>\n                    <\/jats:italic>\n                    nanocomposites are reported by incorporating TiO\n                    <jats:sub>2<\/jats:sub>\n                    nanoclusters into the \u03b2\u2010phase W, achieving a maximum spin Hall angle of \u22121.66 and damping\u2010like SOT efficiency\u00a0of \u22120.94, representing 114% enhancement over pure W. By theoretically separating the contributions of the intrinsic and extrinsic mechanisms of the spin Hall effect, the enhancement of spin\u2212orbit torque efficiency originates from substantial side jump induced by TiO\n                    <jats:sub>2<\/jats:sub>\n                    nanoclusters. Current\u2010induced magnetization switching of W\n                    <jats:sub>0.88<\/jats:sub>\n                    (TiO\n                    <jats:sub>2<\/jats:sub>\n                    )\n                    <jats:sub>0.12<\/jats:sub>\n                    demonstrates ultralow critical density (1.78\u00a0\u00d7\u00a010\n                    <jats:sup>6<\/jats:sup>\n                    A\u00a0cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    ). Combined with its cost\u2010effectiveness and low power consumption, these results position W\n                    <jats:sub>0.88<\/jats:sub>\n                    (TiO\n                    <jats:sub>2<\/jats:sub>\n                    )\n                    <jats:sub>0.12<\/jats:sub>\n                    as a promising candidate to replace conventional \u03b2\u2010W in industrial SOT\u2010magnetic random\u2010access memory\u00a0applications.\n                  <\/jats:p>","DOI":"10.1002\/smll.202507259","type":"journal-article","created":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T06:46:27Z","timestamp":1760424387000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Ultralarge Spin Hall Angle via TiO\n                    <sub>2<\/sub>\n                    Nanocluster\u2010Mediated Side\u2010Jump Scattering"],"prefix":"10.1002","volume":"21","author":[{"ORCID":"https:\/\/orcid.org\/0009-0009-8779-9372","authenticated-orcid":false,"given":"Xinkai","family":"Xu","sequence":"first","affiliation":[{"name":"School of Electronic Science and Engineering University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"},{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuanjing","family":"Qu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yixin","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"},{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qinghui","family":"Yang","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"},{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dainan","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China  Chengdu 610054 P. R. China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Huaiwu","family":"Zhang","sequence":"additional","affiliation":[{"name":"School of Electronic Science and Engineering University of Electronic Science and Technology of China  Chengdu 610054 P. R. 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