{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,11]],"date-time":"2026-10-11T13:19:26Z","timestamp":1791724766675,"version":"4.3.4"},"reference-count":47,"publisher":"Wiley","issue":"50","license":[{"start":{"date-parts":[[2025,10,28]],"date-time":"2025-10-28T00:00:00Z","timestamp":1761609600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2025,10,28]],"date-time":"2025-10-28T00:00:00Z","timestamp":1761609600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52402333"],"award-info":[{"award-number":["52402333"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2025,12]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    2D high\u2010entropy oxides (HEOs) are an emerging class of entropy\u2010stabilized materials with unique mechanical, catalytic, and magnetic properties distinct from their bulk counterparts. However, the influence of disordered multivalent cations with varying spin orientations on magnetic exchange interactions remains unexplored due to challenges in synthesizing atomically thin HEOs. Here, the van der Waals epitaxial growth of 2D single\u2010crystalline spinel\u2010typed high\u2010entropy (CoCrFeMnNi)\n                    <jats:sub>3<\/jats:sub>\n                    O\n                    <jats:sub>4<\/jats:sub>\n                    nanoflakes with a thickness down to two unit cells via a molecular sieve\u2010assisted chemical vapor deposition method is reported. The addition of molecular sieves enables a steady vapor supply and assists in achieving a more uniform cation distribution, confirmed by atomic\u2010resolution STEM imaging. Compared to 2D Fe\n                    <jats:sub>3<\/jats:sub>\n                    O\n                    <jats:sub>4<\/jats:sub>\n                    reference nanoflakes, these HEOs provide a robust platform to study entropy\u2010driven magnetic behavior in nonlayered 2D spinels. The HEO nanoflakes preserve long\u2010range ferrimagnetic order and exhibit isotropic saturated magnetization and coercivity. Magnetic force microscopy reveals domain evolution from single\u2010domain to vortex, and ultimately to multidomain states with well\u2010defined and straight domain walls depending on nanoflake size and thickness. These findings verify magnetic homogenization and a gradually harder magnetic transition arising from randomly distributed cations with competing interactions, demonstrating the potential of high\u2010entropy design in tailoring magnetic properties of 2D oxides.\n                  <\/jats:p>","DOI":"10.1002\/smll.202508297","type":"journal-article","created":{"date-parts":[[2025,10,28]],"date-time":"2025-10-28T13:36:30Z","timestamp":1761658590000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Epitaxial Growth of 2D Single\u2010Crystal Spinel Oxide with High\u2010Entropy Driven Magnetic Homogenization"],"prefix":"10.1002","volume":"21","author":[{"given":"Yu","family":"Wang","sequence":"first","affiliation":[{"name":"Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences  Hangzhou 310024 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Materials for High\u2010Power Laser Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences  Shanghai 201800 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7479-4531","authenticated-orcid":false,"given":"Tao","family":"Liang","sequence":"additional","affiliation":[{"name":"Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences  Hangzhou 310024 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