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Consequently, enhancing the intrinsic stability of the red\u2010emitting CsPbBrI\n                    <jats:sub>2<\/jats:sub>\n                    QDs is paramount to enable their direct mixing with PR for subsequent lithographic processing. Herein, a B\u2010site\u2010doped CsPbBrI\n                    <jats:sub>2<\/jats:sub>\n                    QD is designed by introducing Sr\n                    <jats:sup>2<\/jats:sup>\n                    \u207a. This doping enhances the lattice stability and partially repairs surface defects. The Sr\u2010doped CsPbBrI\n                    <jats:sub>2<\/jats:sub>\n                    QDs solution maintains stability for 30 days, retaining 93.7% of its initial photoluminescence (PL) intensity with a PL peak barely shift, while the films show enhanced thermal tolerance. Owing to the high stability, the Sr\u2010doped CsPbBrI\n                    <jats:sub>2<\/jats:sub>\n                    QDs are mixed with commercial PR, and the blend maintained a photoluminescence quantum yield (PLQY) of 61%. Photolithographic patterned films achieve the minimum feature size of 88.39 \u00b5m with better uniformity and luminescence intensity. Encapsulated within the PR matrix, the QD\u2010PR films confer exceptional water stability, retaining strong luminescence even after 48\u00a0h immersion, and resistance to polar solvents. Sr\u2010doped CsPbBrI\n                    <jats:sub>2<\/jats:sub>\n                    QDs and the commercial PR synergistically overcome compatibility barriers, facilitating simple and efficient photolithographic patterning.\n                  <\/jats:p>","DOI":"10.1002\/smll.202509148","type":"journal-article","created":{"date-parts":[[2025,11,25]],"date-time":"2025-11-25T11:27:44Z","timestamp":1764070064000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Doping Strategy Enabling CsPbBrI\n                    <sub>2<\/sub>\n                    Perovskite Quantum Dot\u2010Photoresist Compatible Blending with High Stability for Ultra\u2010Simplified Photolithography"],"prefix":"10.1002","volume":"22","author":[{"given":"Bin","family":"Wang","sequence":"first","affiliation":[{"name":"Key Laboratory of Advanced Displaying Materials and Devices Ministry of Industry and Information Technology School of Materials Science and Engineering Nanjing University of Science and Technology  Nanjing 210094 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Mulin","family":"Li","sequence":"additional","affiliation":[{"name":"Key Laboratory of Advanced Displaying Materials and Devices Ministry of Industry and Information Technology School of Materials Science and Engineering Nanjing University of Science and Technology  Nanjing 210094 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junyi","family":"You","sequence":"additional","affiliation":[{"name":"Key Laboratory of Advanced Displaying Materials and Devices Ministry of Industry and Information Technology School of Materials Science and Engineering Nanjing University of Science and Technology  Nanjing 210094 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Fengyi","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Advanced Displaying Materials and Devices Ministry of Industry and Information Technology School of Materials Science and Engineering Nanjing University of Science and Technology  Nanjing 210094 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rongqiu","family":"Lv","sequence":"additional","affiliation":[{"name":"Key Laboratory of Advanced Displaying Materials and Devices Ministry of Industry and Information Technology School of Materials Science and Engineering Nanjing University of Science and Technology  Nanjing 210094 China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Weiwei","family":"Wang","sequence":"additional","affiliation":[{"name":"Kunshan Fantaview Electronic Technology Co., L.T.D. 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