{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,3]],"date-time":"2026-10-03T20:24:07Z","timestamp":1791059047561,"version":"4.1.0"},"reference-count":43,"publisher":"Wiley","issue":"4","license":[{"start":{"date-parts":[[2025,11,28]],"date-time":"2025-11-28T00:00:00Z","timestamp":1764288000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2025,11,28]],"date-time":"2025-11-28T00:00:00Z","timestamp":1764288000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/100020595","name":"National Science and Technology Council","doi-asserted-by":"publisher","award":["112\u20102112\u2010M\u2010005\u2010016\u2010MY3"],"award-info":[{"award-number":["112\u20102112\u2010M\u2010005\u2010016\u2010MY3"]}],"id":[{"id":"10.13039\/100020595","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100020595","name":"National Science and Technology Council","doi-asserted-by":"publisher","award":["NSTC 112\u20102112\u2010M\u2010005\u2010016\u2010MY3"],"award-info":[{"award-number":["NSTC 112\u20102112\u2010M\u2010005\u2010016\u2010MY3"]}],"id":[{"id":"10.13039\/100020595","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2026,1]]},"abstract":"<jats:title>Abstract<\/jats:title>\n                  <jats:p>\n                    Conventional Cu doping in Bi\n                    <jats:sub>0.5<\/jats:sub>\n                    Sb\n                    <jats:sub>1.5<\/jats:sub>\n                    Te\n                    <jats:sub>3<\/jats:sub>\n                    relies on high\u2010temperature alloying, which tunes carrier concentration but also introduces structural disorder that degrades mobility and limits thermoelectric performance. To overcome this issue, a thermally driven Cu intercalation approach is developed that inserts Cu atoms into the van der Waals (vdW) gaps and employs spark plasma sintering (SPS) to form a well\u2010textured architecture. Cu intercalation modifies the interlayer registry, while SPS\u2010induced basal\u2010plane alignment preserves single\u2010crystal\u2010like anisotropic transport and mitigates the cleavage fragility of the layered structure. The resulting microstructure, featuring aligned lamellae and subtle lattice distortions, facilitates anisotropic carrier conduction and enhances phonon scattering. Consequently, the carrier mobility increases from 158 to 287 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    , the power factor reaches \u224860.6 \u00b5W cm\n                    <jats:sup>\u22121<\/jats:sup>\n                    K\n                    <jats:sup>\u22122<\/jats:sup>\n                    , and the lattice thermal conductivity is suppressed, as supported by Debye\u2013Callaway analysis. A peak figure of merit (ZT) of \u22481.6 at 370 K is achieved, \u224870% higher than that of the non\u2010intercalated counterpart. This work establishes Cu intercalation combined with SPS texturing as a decisive materials\u2010preparation route and a broadly applicable strategy for layered materials, enabling concurrent enhancement of charge transport and mechanical robustness.\n                  <\/jats:p>","DOI":"10.1002\/smll.202509653","type":"journal-article","created":{"date-parts":[[2025,11,29]],"date-time":"2025-11-29T05:15:18Z","timestamp":1764393318000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Cu\u2010Intercalated and Structurally Tailored Layered Bi\n                    <sub>0.5<\/sub>\n                    Sb\n                    <sub>1.5<\/sub>\n                    Te\n                    <sub>3<\/sub>\n                    Achieves Enhanced Power Factor and Thermoelectric ZT"],"prefix":"10.1002","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3232-9252","authenticated-orcid":false,"given":"Cheng\u2010Lung","family":"Chen","sequence":"first","affiliation":[{"name":"Department of Physics National Chung Hsing University  Taichung City 40227 Taiwan"},{"name":"Institute of Nanoscience National Chung Hsing University  Taichung City 40227 Taiwan"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yi\u2010Xuan","family":"He","sequence":"additional","affiliation":[{"name":"Department of Physics National Chung Hsing University  Taichung City 40227 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