{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,8]],"date-time":"2026-03-08T19:04:11Z","timestamp":1772996651248,"version":"3.50.1"},"reference-count":55,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T00:00:00Z","timestamp":1772150400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,2,27]],"date-time":"2026-02-27T00:00:00Z","timestamp":1772150400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100004826","name":"Natural Science Foundation of Beijing Municipality","doi-asserted-by":"publisher","award":["Z210006"],"award-info":[{"award-number":["Z210006"]}],"id":[{"id":"10.13039\/501100004826","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    The rapid growth of data\u2010intensive computing and optoelectronic information processing demands memory devices with high density, multilevel programmability, and fast operation. Floating\u2010gate memory has attracted considerable attention due to its reliable charge\u2010storage characteristics, but it is still limited by low storage density, restricted multilevel capability, and the lack of optoelectronic integration. Here, we report a Molybdenum ditelluride\/hexagonal boron nitride\/multilayer graphene (MoTe\n                    <jats:sub>2<\/jats:sub>\n                    \/hBN\/MLG) van der Waals heterojunction that achieves an ultrawide p\u2010type memory window (\u223c199.2\u00a0V), a high memory window ratio of 90.5%, and an ultrahigh storage density (&gt;10\n                    <jats:sup>13<\/jats:sup>\n                    \u00a0cm\n                    <jats:sup>\u22122<\/jats:sup>\n                    ). Our device demonstrates an ultrafast response speed of 50\u00a0ns, robust endurance over 10\n                    <jats:sup>6<\/jats:sup>\n                    cycles, and reliable data retention projected for 10 years. Under electrical pulse modulation, we achieved multilevel memory exceeding 6 bits and successfully emulated synaptic plasticity. Furthermore, robust negative photoconductance (NPC) enables laser\u2010driven optical modulation with multilevel memory exceeding 7 bits. In addition, we employed a hybrid digital\u2013analog architecture to simulate in\u2010memory computing for CIFAR\u201010 image classification, achieving an accuracy exceeding 95%, comparable to pure digital implementations. Together, these advances position our device as a promising building block for scalable neuromorphic and optoelectronic information technologies.\n                  <\/jats:p>","DOI":"10.1002\/smll.202510769","type":"journal-article","created":{"date-parts":[[2026,3,8]],"date-time":"2026-03-08T16:07:08Z","timestamp":1772986028000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Multi\u2010Bit Floating\u2010Gate Memory with an Ultrawide Programmable Window"],"prefix":"10.1002","author":[{"given":"Ce","family":"Li","sequence":"first","affiliation":[{"name":"Centre For Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology  Beijing China"},{"name":"Beijing Key Lab of Nanophotonics &amp; Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology  Beijing China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ning","family":"Lin","sequence":"additional","affiliation":[{"name":"Department of Electrical and Electronic Engineering the University of Hong Kong  Hong Kong China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Dongliang","family":"Yang","sequence":"additional","affiliation":[{"name":"Centre For Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology  Beijing China"},{"name":"Beijing Key Lab of Nanophotonics &amp; Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology  Beijing China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Tianze","family":"Yu","sequence":"additional","affiliation":[{"name":"Centre For Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology  Beijing China"},{"name":"Beijing Key Lab of Nanophotonics &amp; Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology  Beijing China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Weili","family":"Zhen","sequence":"additional","affiliation":[{"name":"Centre For Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology  Beijing China"},{"name":"Beijing Key Lab of Nanophotonics &amp; Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology  Beijing China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2264-0677","authenticated-orcid":false,"given":"Zhongrui","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Microelectronics Southern University of Science and Technology  Shenzhen China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Linfeng","family":"Sun","sequence":"additional","affiliation":[{"name":"Centre For Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology  Beijing China"},{"name":"Beijing Key Lab of Nanophotonics &amp; Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology  Beijing 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