{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,14]],"date-time":"2026-10-14T21:39:55Z","timestamp":1792013995083,"version":"4.4.0"},"reference-count":53,"publisher":"Wiley","issue":"18","license":[{"start":{"date-parts":[[2026,1,28]],"date-time":"2026-01-28T00:00:00Z","timestamp":1769558400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,1,28]],"date-time":"2026-01-28T00:00:00Z","timestamp":1769558400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS\u20102023\u201000222070"],"award-info":[{"award-number":["RS\u20102023\u201000222070"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2026,3]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>Quantum dot light\u2010emitting diodes (QLEDs) hold immense potential for next\u2010generation display technologies, yet their progress has been hampered by the lack of efficient inorganic hole\u2010injection layers (HILs), which typically suffer from poor energy\u2010level alignment and interfacial traps. Herein, a powerful interfacial engineering strategy is reported that transforms the performance of inorganic HILs by integrating Cu\u2010doped NiO (Cu:NiO) with halide\u2010functionalized self\u2010assembled monolayers (SAMs) of (2\u2010(9H\u2010carbazol\u20109\u2010yl)ethyl)phosphonic acid (2PACz). Halide\u2010SAMs induce strong dipoles that shift the Cu:NiO valence band to deeper levels, enhance hole density, suppress surface defects, and lower the hole\u2010injection barrier into the hole\u2010transport layer. Furthermore, density functional theory (DFT) calculations identify that the high polarizability of the halide substituents plays a decisive role. This high polarizability enhances van der Waals (vdW) dispersion forces, promoting robust molecular anchoring and the formation of a dense, stable passivation layer that effectively suppresses surface defects. Consequently, QLEDs incorporating I\u20102PACz\u2010modified Cu:NiO achieve a record\u2010high external quantum efficiency (EQE) of 26.95% (Mean 19.53%), a 3.5\u2010fold improvement over unmodified devices. This represents the highest efficiency reported for green QLEDs employing inorganic HILs. This work demonstrates that simultaneously tuning interface polarity and molecular polarizability offers a viable pathway to trap\u2010suppressed, charge\u2010balanced, and high\u2010performance QLED architectures.<\/jats:p>","DOI":"10.1002\/smll.202512080","type":"journal-article","created":{"date-parts":[[2026,1,29]],"date-time":"2026-01-29T07:30:25Z","timestamp":1769671825000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Engineering Interface Polarity via Halide\u2010Functionalized Self\u2010Assembled Monolayers for NiO\u2010Based QLEDs with High External Quantum Efficiency"],"prefix":"10.1002","volume":"22","author":[{"given":"Hyo\u2010Jun","family":"Lim","sequence":"first","affiliation":[{"name":"School of Materials Science and Engineering Kyungpook National University  Daegu Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyun 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