{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,5]],"date-time":"2026-10-05T19:23:55Z","timestamp":1791228235687,"version":"4.1.0"},"reference-count":49,"publisher":"Wiley","issue":"13","license":[{"start":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T00:00:00Z","timestamp":1767571200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T00:00:00Z","timestamp":1767571200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2026,3]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Te displays the potentials in chirality, anisotropic electronics, and optoelectronics owing to its unique chiral chain lattice structure. However, the specifically oriented growth is still challenging thanks to a lack of lattice\u2010matched substrates. Herein, (100)\u2010oriented Te single\u2010crystalline films are grown via a van der Waals epitaxial (vdWE) mode. Wafer\u2010scale and high\u2010crystal quality with a low full width at half maximum (0.25\u00b0) and an ultrahigh hole Hall mobility (1267.2 cm\n                    <jats:sup>2<\/jats:sup>\n                    V\n                    <jats:sup>\u22121<\/jats:sup>\n                    s\n                    <jats:sup>\u22121<\/jats:sup>\n                    ) are yielded in the 58.2\u00a0nm. In\u2010plane anisotropic transport is present in these vdWE films, and exceptional current switching is displayed in the ones below 21.3\u00a0nm. Photoresponse performance increases with the film thickness while the polarization effect is absent above the 23.5\u00a0nm. Broadband detection from 420 to 2000\u00a0nm is demonstrated. Peak responsivity, detectivity, and external quantum efficiency reach 2.97 \u00d7 10\n                    <jats:sup>4<\/jats:sup>\n                    A\/W, 1.21 \u00d7 10\n                    <jats:sup>13<\/jats:sup>\n                    Jones, and 7.12 \u00d7 10\n                    <jats:sup>4<\/jats:sup>\n                    % at 520\u00a0nm in the 58.2\u00a0nm field\u2010effect transistor (FET). Dual\u2010symmetric polarization effect is revealed in the 11.2\u00a0nm FET detectors with a polarization ratio of 1.11 at 1650\u00a0nm and 1.04 at 638\u00a0nm. This work presents a scalable growth route for (100)\u2010oriented Te and highlights the potential in integrated, high\u2010speed, and polarized devices.\n                  <\/jats:p>","DOI":"10.1002\/smll.202513317","type":"journal-article","created":{"date-parts":[[2026,1,5]],"date-time":"2026-01-05T14:42:33Z","timestamp":1767624153000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":6,"title":["Wafer\u2010Scale (100)\u2010Oriented Te Single\u2010Crystalline Thin Films with Exceptional Electronic and Photodetection Performance"],"prefix":"10.1002","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0009-0006-6317-6275","authenticated-orcid":false,"given":"Tao","family":"Hu","sequence":"first","affiliation":[{"name":"Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University  Shanghai P. R. China"},{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences  Shanghai P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiaochu","family":"Chen","sequence":"additional","affiliation":[{"name":"Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University  Shanghai P. R. China"},{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences  Shanghai P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0006-5597-7005","authenticated-orcid":false,"given":"Dongyang","family":"Zhao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences  Shanghai P. R. China"},{"name":"Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, College of Future Information Technology State Key Laboratory of Photovoltaic Science and Technology Fudan University  Shanghai P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hechun","family":"Cao","sequence":"additional","affiliation":[{"name":"Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University  Shanghai P. R. China"},{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences  Shanghai P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yu","family":"Jia","sequence":"additional","affiliation":[{"name":"Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University  Shanghai P. R. 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China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0261-6736","authenticated-orcid":false,"given":"Xudong","family":"Wang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences  Shanghai P. R. China"},{"name":"Shanghai Key Laboratory of Optical Coatings and Spectral Modulation  Shanghai P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jing","family":"Yang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University  Shanghai P. R. China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yuanyuan","family":"Zhang","sequence":"additional","affiliation":[{"name":"Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics East China Normal University  Shanghai P. R. 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