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Here, we demonstrate a dielectric\u2010mediated van der Waals epitaxy that enables freestanding\u2010mimetic growth of ultralong A17 Bi nanoribbons with lengths exceeding 30\u00a0\u00b5m and aspect ratios larger than 150. Using the primary overlay alignment that minimizes lattice misfit between bismuthene and mica, the weak heteroepitaxial interaction facilitates the formation of multilayer, ultralong A17 Bi nanoribbons. The faceting energetics of three distinct edges, i.e., zigzag facet at longitudinal edges, armchair and diagonal facets at terminal edges, are studied, which helps to elucidate a Wulff construction framework governed by kinetic competition between edge\u2010specific growth rates. This work provides critical insights into vapor\u2010phase epitaxy of A17 Bi that yields solution synthesis like morphologies, bridging a key gap between epitaxial control and crystallographic design.<\/jats:p>","DOI":"10.1002\/smll.202513382","type":"journal-article","created":{"date-parts":[[2026,1,8]],"date-time":"2026-01-08T11:24:16Z","timestamp":1767871456000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Freestanding\u2010Mimetic Growth of Ultralong A17 Bismuth Nanoribbons via Dielectric\u2010Mediated Van der Waals Epitaxy"],"prefix":"10.1002","volume":"22","author":[{"given":"Yinliang","family":"Tang","sequence":"first","affiliation":[{"name":"School of Physical Science and Technology ShanghaiTech University  Pudong Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Nan","family":"Wu","sequence":"additional","affiliation":[{"name":"School of Physical Science and Technology 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