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ADF\u2010STEM imaging on the self\u2010assembled (Ti,V)O\n                    <jats:sub>2<\/jats:sub>\n                    heterostructure, exhibiting the alternating V\u2010rich and Ti\u2010rich layers, unexpectedly reveals the higher contrast in V\u2010rich layers in spite of the nearly identical atomic numbers of Ti (\n                    <jats:italic>Z<\/jats:italic>\n                    = 22) and V (\n                    <jats:italic>Z<\/jats:italic>\n                    = 23). Our analyses of local strain mapping and electron energy loss spectroscopy (EELS) confirm that oxygen vacancies are formed dominantly in the V\u2010rich and thus the higher contrast in the V\u2010rich layers is attributable to the accumulation of oxygen vacancies facilitated by the inherent [001] channel pathways of the rutile structure. Our results highlight the critical role of crystallographic pathways in guiding oxygen vacancy diffusion within rutile\u2010based heterostructures.\n                  <\/jats:p>","DOI":"10.1002\/smll.202513789","type":"journal-article","created":{"date-parts":[[2026,3,30]],"date-time":"2026-03-30T10:02:31Z","timestamp":1774864951000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Vacancy\u2010Induced Z\u2010Contrast Anomaly in Self\u2010Assembled (Ti,V)O\n                    <sub>2<\/sub>\n                    Heterostructure"],"prefix":"10.1002","volume":"22","author":[{"given":"Hyeji","family":"Sim","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering Pohang University of Science and Technology (POSTECH)  Pohang Republic of 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