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Here, we combine time\u2010dependent density functional theory with nonadiabatic molecular dynamics to study how stacking\u2010dependent ferroelectric polarization in bilayer hBN can be used to tune charge redistribution, electron\u2013phonon coupling, and nonradiative carrier recombination in MoSe\n                    <jats:sub>2<\/jats:sub>\n                    \/hBN and WSe\n                    <jats:sub>2<\/jats:sub>\n                    \/hBN heterostructures. Switching the bilayer hBN stacking between nonpolar AA\u2032 and ferroelectric AB\/BA reverses the interfacial potential step and charge\u2010transfer direction, which modulates the nonadiabatic coupling, electronic decoherence, and recombination kinetics. As a result, carrier lifetimes can be tuned over more than one order of magnitude, from 1.46 to 74.6\u00a0ns, by choosing the stacking sequence and TMD species. Fourier analysis of band\u2010gap fluctuations identifies mode\u2010selective phonon coupling: long\u2010lived configurations are associated with spectra dominated by low\u2010frequency interlayer shear and breathing modes, whereas short\u2010lived ones show enhanced contributions from intralayer optical phonons of A\n                    <jats:sub>1<\/jats:sub>\n                    \u2032, A\n                    <jats:sub>2<\/jats:sub>\n                    \u2033, and E\u2032 symmetry that more efficiently modulate the band edges. These results establish sliding\u2010ferroelectric proximity engineering as an effective strategy for programming interfacial charge dynamics in 2D heterostructures and provide microscopic design rules for reconfigurable ferroelectric semiconductor platforms for future optoelectronic and information devices.\n                  <\/jats:p>","DOI":"10.1002\/smll.202600046","type":"journal-article","created":{"date-parts":[[2026,5,13]],"date-time":"2026-05-13T08:50:38Z","timestamp":1778662238000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Sliding\u2010Ferroelectric hBN Bilayer Controlled Carrier Lifetimes in TMD Heterostructures"],"prefix":"10.1002","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0009-0005-4068-9644","authenticated-orcid":false,"given":"Yuxin","family":"Yang","sequence":"first","affiliation":[{"name":"Eastern Institute of Technology  Ningbo 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and Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences  Changchun China"},{"name":"University of Chinese Academy of Sciences  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1563-4738","authenticated-orcid":false,"given":"Su\u2010Huai","family":"Wei","sequence":"additional","affiliation":[{"name":"Eastern Institute of Technology  Ningbo 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