{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,29]],"date-time":"2026-08-29T04:34:22Z","timestamp":1787978062643,"version":"build-2784847793"},"reference-count":63,"publisher":"Wiley","issue":"35","license":[{"start":{"date-parts":[[2026,5,6]],"date-time":"2026-05-06T00:00:00Z","timestamp":1778025600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,5,6]],"date-time":"2026-05-06T00:00:00Z","timestamp":1778025600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2026,6]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Mixed\u2010dimensional heterostructures consisting of zero\u2010 and two\u2010dimensional materials offer a promising platform for optoelectronic devices, as the versatility of material combination allows tunable optical properties. Bias\u2010induced approaches provide an additional means to tune the optical properties beyond the intrinsic band alignment of van der Waals junctions. Here, bias\u2010induced tunneling characteristics are achieved in vertically stacked WSe\n                    <jats:sub>2<\/jats:sub>\n                    \/h\u2010BN\/CdSe quantum dots\/graphene heterostructures by employing the top graphene electrode to regulate carrier transport across the h\u2010BN barrier. The electrical analyses based on the Simmons approximation demonstrate tunneling\u2010mediated charge transfer through thin h\u2010BN layers and bias\u2010dependent modulation of the barrier height. Furthermore, tunneling\u2010induced exciton dissociation in WSe\n                    <jats:sub>2<\/jats:sub>\n                    and CdSe QDs is observed through spectral responsivity and scanning photocurrent measurements. This work establishes a voltage\u2010dependent tunneling platform that enables deterministic control of carrier dynamics in mixed\u2010dimensional optoelectronic devices.\n                  <\/jats:p>","DOI":"10.1002\/smll.73645","type":"journal-article","created":{"date-parts":[[2026,5,6]],"date-time":"2026-05-06T08:50:42Z","timestamp":1778057442000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Electrically Tunable Tunneling and Spectral Response in WSe\n                    <sub>2<\/sub>\n                    \/h\u2010BN\/CdSe\/Graphene Heterostructure"],"prefix":"10.1002","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0656-9025","authenticated-orcid":false,"given":"Sang\u2010Hyeon","family":"Lee","sequence":"first","affiliation":[{"name":"Department of Energy Science &amp; Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST)  Daegu Republic of 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