{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T03:09:47Z","timestamp":1790132987650,"version":"4.0.1"},"reference-count":51,"publisher":"Wiley","issue":"36","license":[{"start":{"date-parts":[[2026,5,7]],"date-time":"2026-05-07T00:00:00Z","timestamp":1778112000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,5,7]],"date-time":"2026-05-07T00:00:00Z","timestamp":1778112000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2024YFB3813800"],"award-info":[{"award-number":["2024YFB3813800"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52272254"],"award-info":[{"award-number":["52272254"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2026,6]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Conventional thermoelectric semiconductors are intrinsically brittle, limiting their integration and reliability. Recent studies have revealed intrinsic plasticity in several systems, such as Mg\n                    <jats:sub>3<\/jats:sub>\n                    Bi\n                    <jats:sub>2<\/jats:sub>\n                    and Bi\n                    <jats:sub>2<\/jats:sub>\n                    Te\n                    <jats:sub>3<\/jats:sub>\n                    , yet this deformability has been primarily attributed to mesoscopic dislocation activity. Here, we unveil an atomic\u2010level charge\u2013mechanical coupling that directly governs plastic deformation in layered bismuth telluride materials. It represents a dislocation\u2010independent pathway for deformation, originating from the tunable interlayer bonding itself. We demonstrate that reducing carrier concentration weakens van der Waals attraction, expands interlayer spacing, and thus promotes interlayer slip, resulting in remarkable ductility with a bending strain of 26% and a compressive strain exceeding 90%. Importantly, this mechanism does not compromise thermoelectric performance. Instead, the optimized\n                    <jats:italic>p<\/jats:italic>\n                    \u2010type Bi\n                    <jats:sub>0.5<\/jats:sub>\n                    Sb\n                    <jats:sub>1.5<\/jats:sub>\n                    Te\n                    <jats:sub>3<\/jats:sub>\n                    simultaneously achieves a high peak dimensionless figure of merit\u00a0(\n                    <jats:italic>zT<\/jats:italic>\n                    ) of 1.23 at 350 K. This work reveals how electronic states can be harnessed to tune plasticity in layered semiconductors and provides a general strategy for synergistically enhancing mechanical flexibility and thermoelectric efficiency.\n                  <\/jats:p>","DOI":"10.1002\/smll.73701","type":"journal-article","created":{"date-parts":[[2026,5,7]],"date-time":"2026-05-07T07:10:28Z","timestamp":1778137828000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Manipulating Charge\u2010Mechanical Coupling to Achieve Superior Ductility and High Thermoelectric Properties in Layered Bismuth Telluride"],"prefix":"10.1002","volume":"22","author":[{"given":"Ruijie","family":"Li","sequence":"first","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo China"},{"name":"Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences  Beijing 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Materials Science and Engineering Kunming University of Science and Technology  Kunming China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lidong","family":"Chen","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo China"},{"name":"Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-4036-9702","authenticated-orcid":false,"given":"Qiang","family":"Zhang","sequence":"additional","affiliation":[{"name":"Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences  Ningbo China"},{"name":"Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences  Beijing 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