{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,7]],"date-time":"2026-08-07T17:22:48Z","timestamp":1786123368764,"version":"build-2736575974"},"reference-count":49,"publisher":"Wiley","issue":"44","license":[{"start":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T00:00:00Z","timestamp":1781827200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T00:00:00Z","timestamp":1781827200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000078","name":"Division of Materials Research","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000078","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"published-print":{"date-parts":[[2026,8]]},"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    While dislocations are traditionally perceived as detrimental to electronic materials, recent theories predicted emerging functional properties associated with dislocations. To identify and ultimately harness such functionality, approaches are needed for embedding single dislocations with tunable geometry (edge\/screw ratio) in small\u2010volume host crystals. Here, we address this challenge by mixing screw\u2010 and edge\u2010dislocations in Ge\n                    <jats:sub>1\u2010x<\/jats:sub>\n                    Sn\n                    <jats:sub>x<\/jats:sub>\n                    S layered (van der Waals) core\u2010shell nanowires. Phase separation during vapor\u2010liquid\u2010solid growth yields the required core\u2010shell structure, and the growth process also produces a homojunction between a defect\u2010free layered segment near the tip and a base segment containing a single mixed (helical) dislocation. Nanometer\u2010scale cathodoluminescence (CL) spectroscopy sheds light on the effects of single helical dislocations on optoelectronics. CL shows that the luminescence intensity depends on the distance from the dislocation line. Efficient radiative recombination is found for the pristine material near the nanowire tip whereas the dislocated part of the nanowires shows a sharp reduction of the spontaneous emission quantum efficiency, attributed to the edge component of the helical dislocation. The results demonstrate control over the geometry of single mixed dislocations and the ability of probing their effect on functional properties, important steps toward the ultimate use of dislocations as active elements in devices.\n                  <\/jats:p>","DOI":"10.1002\/smll.74258","type":"journal-article","created":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T08:55:16Z","timestamp":1781859316000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Optoelectronics of Single Mixed Dislocations in Van Der Waals Core\u2010Shell Nanowires"],"prefix":"10.1002","volume":"22","author":[{"given":"Eli","family":"Sutter","sequence":"first","affiliation":[{"name":"Department of Mechanical &amp; Materials Engineering University of Nebraska\u2010Lincoln  Lincoln Nebraska USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Peter","family":"Sutter","sequence":"additional","affiliation":[{"name":"Department of Electrical &amp; Computer Engineering University of Nebraska\u2010Lincoln  Lincoln Nebraska USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,6,19]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1039\/df9490500048"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.121.066401"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1088\/1367\u20102630\/ac61cf"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.95.115410"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.116.166601"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.2.012043"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1038\/nphys1220"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1088\/1367\u20102630\/aaa383"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-648X\/aaf6e1"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-648X\/aa7955"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.100.075432"},{"key":"e_1_2_8_13_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.86.512"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1007\/s40820\u2010024\u201001611\u20101"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202107362"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.9b05305"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0006075"},{"key":"e_1_2_8_18_1","doi-asserted-by":"publisher","DOI":"10.1126\/sciadv.adv2899"},{"key":"e_1_2_8_19_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4876265"},{"key":"e_1_2_8_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202417952"},{"key":"e_1_2_8_21_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202203032"},{"key":"e_1_2_8_22_1","doi-asserted-by":"publisher","DOI":"10.1002\/adem.200800283"},{"key":"e_1_2_8_23_1","first-page":"964","article-title":"Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices Used in Optics","volume":"3","author":"Kittler M.","year":"2007","journal-title":"Biology, and Electronics Small"},{"key":"e_1_2_8_24_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202403550"},{"key":"e_1_2_8_25_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.44.287"},{"key":"e_1_2_8_26_1","doi-asserted-by":"publisher","DOI":"10.1080\/01418618008239335"},{"key":"e_1_2_8_27_1","doi-asserted-by":"publisher","DOI":"10.1088\/0022\u20103719\/17\/35\/017"},{"key":"e_1_2_8_28_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.12.054038"},{"key":"e_1_2_8_29_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.17.024019"},{"key":"e_1_2_8_30_1","doi-asserted-by":"publisher","DOI":"10.1021\/jacs.3c06469"},{"key":"e_1_2_8_31_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010019\u20101147\u2010x"},{"key":"e_1_2_8_32_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202104784"},{"key":"e_1_2_8_33_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.accounts.3c00502"},{"key":"e_1_2_8_34_1","doi-asserted-by":"publisher","DOI":"10.1039\/D5MA00694E"},{"key":"e_1_2_8_35_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.1c07349"},{"key":"e_1_2_8_36_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemmater.1c00289"},{"key":"e_1_2_8_37_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202006412"},{"key":"e_1_2_8_38_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1721234"},{"key":"e_1_2_8_39_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1659994"},{"key":"e_1_2_8_40_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.19660140216"},{"key":"e_1_2_8_41_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1658068"},{"key":"e_1_2_8_42_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1868059"},{"key":"e_1_2_8_43_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.336359"},{"key":"e_1_2_8_44_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl5045082"},{"key":"e_1_2_8_45_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010023\u201001073\u20100"},{"key":"e_1_2_8_46_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010019\u201009815\u20105"},{"key":"e_1_2_8_47_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.6b04002"},{"key":"e_1_2_8_48_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aba9778"},{"key":"e_1_2_8_49_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053\u20101583\/ac207b"},{"key":"e_1_2_8_50_1","first-page":"328","volume-title":"Thermodynamic Data for Inorganic Sulphides, Selenides and Tellurides","author":"Mills K. 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