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Electrostatic tunability, on the other hand, is crucial in both fundamental studies and practical applications of spintronic devices. However, typical topological edge states are gapless and thus the associated spin\u2010charge conversion is generally insensitive to electrostatic gating. Here, we report electrostatically tunable spin\u2010charge conversion in bilayer WTe\n                    <jats:sub>2<\/jats:sub>\n                    , with behavior most consistently explained by a substantial contribution from residual topological edge states. Compared with thicker semimetallic WTe\n                    <jats:sub>2<\/jats:sub>\n                    reference devices, the bilayer WTe\n                    <jats:sub>2<\/jats:sub>\n                    exhibits an order\u2010of\u2010magnitude enhancement in conversion efficiency, which can be significantly modulated with gate voltages. Theoretical calculations reveal that, after interlayer hybridization, residual topological edge states with a small energy gap persist in bilayer WTe\n                    <jats:sub>2<\/jats:sub>\n                    and retain spin\u2010momentum\u2010locked character. The calculated edge\u2010state\u2010related spin Hall conductance is strongly Fermi\u2010level dependent and becomes enhanced near the charge\u2010neutrality regime, consistent with the experimentally observed gate\u2010dependent spin\u2010charge conversion. These results suggest that partially preserved topological edge states can substantially contribute to both enhancement and electrostatic tunability of spin\u2010charge conversion in bilayer WTe\n                    <jats:sub>2<\/jats:sub>\n                    , providing a potential route toward gate\u2010reconfigurable van der Waals spintronic devices.\n                  <\/jats:p>","DOI":"10.1002\/smll.75106","type":"journal-article","created":{"date-parts":[[2026,8,11]],"date-time":"2026-08-11T08:37:33Z","timestamp":1786437453000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Electrostatically Tunable and Topological\u2010Edge\u2010States\u2010Associated Spin\u2010Charge Conversion in Bilayer WTe\n                    <sub>2<\/sub>"],"prefix":"10.1002","volume":"22","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-6798-5954","authenticated-orcid":false,"given":"Xin","family":"Chen","sequence":"first","affiliation":[{"name":"School of Electrical and Electronic Engineering Nanyang Technological University  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tao","family":"Hou","sequence":"additional","affiliation":[{"name":"Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University  Singapore Singapore"},{"name":"Department of Physics Mathematics &amp; Science College Shanghai Normal University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0004-6908-5783","authenticated-orcid":false,"given":"Wanghao","family":"Tian","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering Nanyang Technological University  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ruihan","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering Nanyang Technological University  Singapore Singapore"},{"name":"CINTRA CNRS\/NTU\/THALESUMI 3288 Research Techno Plaza  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haoyun","family":"Chen","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering Nanyang Technological University  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bingyan","family":"Liu","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering Nanyang Technological University  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Binshuo","family":"Zhang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Quantum Functional Materials School of Physical Science and Technology ShanghaiTech University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9386-4857","authenticated-orcid":false,"given":"Yanfeng","family":"Guo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Quantum Functional Materials School of Physical Science and Technology ShanghaiTech University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1180-3127","authenticated-orcid":false,"given":"Guoqing","family":"Chang","sequence":"additional","affiliation":[{"name":"Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2193-9650","authenticated-orcid":false,"given":"Peng","family":"Song","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering Nanyang Technological University  Singapore Singapore"},{"name":"CINTRA CNRS\/NTU\/THALESUMI 3288 Research Techno Plaza  Singapore Singapore"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,8,11]]},"reference":[{"key":"e_1_2_12_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578\u2010021\u201000395\u20109"},{"key":"e_1_2_12_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4726"},{"key":"e_1_2_12_4_1","doi-asserted-by":"publisher","DOI":"10.7566\/JPSJ.86.011001"},{"key":"e_1_2_12_5_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202102102"},{"key":"e_1_2_12_6_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202310768"},{"key":"e_1_2_12_7_1","doi-asserted-by":"publisher","DOI":"10.1007\/3-540-44946-9_18"},{"key":"e_1_2_12_8_1","first-page":"266","article-title":"Theory of the Effect of Spin\u2010Orbit Coupling on Magnetic Resonance in Some Semiconductors","volume":"96","author":"Elliott R. 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