{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T11:15:17Z","timestamp":1790162117988,"version":"4.1.0"},"reference-count":59,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T00:00:00Z","timestamp":1790121600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T00:00:00Z","timestamp":1790121600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["DMR\u20102309000"],"award-info":[{"award-number":["DMR\u20102309000"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>Strain is a powerful tool for tuning the electronic, magnetic, and topological properties of 2D materials \u2010 particularly at high values of strain () where many electronic, magnetic, and structural transitions are predicted. However, most approaches to straining 2D materials are limited below 1.5%, with poor repeatability when cycling strain and low strain transfer upon cooling. Here, we report a high\u2010yield sample preparation and device strain platform that overcomes these limitations, enabling repeatable and reversible strain tuning up to the intrinsic strain\u2010to\u2010failure of the materials tested herein. We furthe r use this platform to controllably design uniform linear strain gradients, revealing a novel route for investigating flexoelectric and flexomagnetic phenomena. Using CrSBr as a standard for gauging strain, we demonstrate uniform uniaxial strain, up to 4%, with negligible slippage and linear strain gradients of up to 0.06%\/. Our strain approach is applicable to a broad class of 2D materials, as validated by its performance for three different phases of transition metal dichalcogenides: 2H\u2010, 1\u2010 and \u2010. In \u2010, we show for the first time splitting of the  and  modes, starting at 2% strain, and record\u2010breaking strain up to 5.5% strain.<\/jats:p>","DOI":"10.1002\/smll.75730","type":"journal-article","created":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T10:46:01Z","timestamp":1790160361000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Achieving Large Uniaxial and Homogeneous Strain in Two\u2010Dimensional Materials"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5518-5087","authenticated-orcid":false,"given":"Yangchen","family":"He","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jessica","family":"Kienbaum","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2873-0120","authenticated-orcid":false,"given":"Wuzhang","family":"Fang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hongrui","family":"Ma","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5307-8384","authenticated-orcid":false,"given":"Ying","family":"Wang","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"},{"name":"Department of Electrical and Computer Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"},{"name":"Department of Physics University of Wisconsin\u2010Madison Madison Wisconsin USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ping","family":"Yuan","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"},{"name":"Department of Physics University of Wisconsin\u2010Madison Madison Wisconsin USA"},{"name":"Department of Chemistry University of Wisconsin\u2010Madison Madison Wisconsin USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7651-3211","authenticated-orcid":false,"given":"Daniel A.","family":"Rhodes","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering University of Wisconsin\u2010Madison Madison Wisconsin USA"},{"name":"Department of Physics University of Wisconsin\u2010Madison Madison Wisconsin USA"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,9,23]]},"reference":[{"issue":"4","key":"e_1_2_7_2_1","doi-asserted-by":"crossref","first-page":"2234","DOI":"10.1063\/1.363052","article-title":"Band Structure, Deformation Potentials, And Carrier Mobility In Strained Si$\\mathrm{Si}$, Ge$\\mathrm{Ge}$, And SiGe$\\mathrm{SiGe}$ Alloys","volume":"80","author":"Fischetti M. 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