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However, tunneling\u2010based FGMEM faces high operating voltage, slow programming, low on\/off ratio, and a small memory window. Here, we demonstrate a 16 \u00d7 16 ferroelectric memristor (FeMEM) array integrating a 2D MoS\n                    <jats:sub>2<\/jats:sub>\n                    channel with a hafnium\u2013zirconium oxide (HZO) layer, enabled by metal\u2013insulator\u2013metal (MIM) annealing and top\u2010electrode etching for direct HZO\u2013MoS\n                    <jats:sub>2<\/jats:sub>\n                    coupling. This enables \u00b11.5 V, 10 \u00b5s array\u2010level operation, outperforming FGMEMs (&gt;\u00b14 V, \u223c100 ms). The array achieves 91% yield and excellent uniformity in ON\u2013OFF current and forward\/reverse threshold voltage (V\n                    <jats:sub>th<\/jats:sub>\n                    ), with Gaussian distributions within \u00b13\u03c3 of the mean. The FeMEM exhibits a large memory window (32.3%) and a high I\n                    <jats:sub>on<\/jats:sub>\n                    \/I\n                    <jats:sub>off<\/jats:sub>\n                    ratio of 1.02 \u00d7 10\n                    <jats:sup>5<\/jats:sup>\n                    \u2014about 2 and 1000 times higher than an FGMEM, respectively. It shows high linearity (\u03b2 = 0.14\/0.68 for long\u2010term potentiation\/depression). Parallel\u2010multiply (PM) operations between input voltages (V) and conductance (G) yield an output current map (I = G \u00d7 V) corresponding to a preprocessed image achieving quality gains of +13.03 dB PSNR, +0.226 SSIM, and 20 times MSE reduction after preprocessing. As an in\u2010memory preprocessing for a CNN, it boosts classification accuracy from 55.7% (noisy inputs) to 95.5% (excluding failed devices).\n                  <\/jats:p>","DOI":"10.1002\/smll.75739","type":"journal-article","created":{"date-parts":[[2026,9,11]],"date-time":"2026-09-11T06:38:20Z","timestamp":1789108700000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Array\u2010Level Integration of MoS\n                    <sub>2\u2013<\/sub>\n                    Hf\n                    <sub>0.5<\/sub>\n                    Zr\n                    <sub>0.5<\/sub>\n                    O\n                    <sub>2<\/sub>\n                    Ferroelectric Memristors for in\u2010Memory Image Preprocessing in Neural Networks"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0003-5477-7018","authenticated-orcid":false,"given":"Jee Hwan","family":"Lee","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Department of Semiconductor and Display Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Memory Business Samsung Electronics  Hwaseong Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Won Woo","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Department of Semiconductor and Display Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Memory Business Samsung Electronics  Hwaseong Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jung Um","family":"Park","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Department of Semiconductor and Display Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Memory Business Samsung Electronics  Hwaseong Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Whan Kyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Department of Semiconductor and Display Engineering Sungkyunkwan University  Suwon Republic of Korea"},{"name":"Semiconductor R&amp;D center Samsung Electronics  Hwaseong Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Do Kyeong","family":"Yun","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0001-6991-3591","authenticated-orcid":false,"given":"Minh Chien","family":"Nguyen","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-7687-8088","authenticated-orcid":false,"given":"Sung Hyun","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Gyu Ri","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of Semiconductor Convergence Engineering Sungkyunkwan University  Suwon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Hyung Suk","family":"Oh","sequence":"additional","affiliation":[{"name":"Department of AI Systems Engineering Sungkyunkwan University  Suwon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ho Sung","family":"Choi","sequence":"additional","affiliation":[{"name":"Department of AI Systems Engineering Sungkyunkwan University  Suwon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1325-2410","authenticated-orcid":false,"given":"Lei","family":"Liao","sequence":"additional","affiliation":[{"name":"State Key Laboratory for Chemo\/Biosensing and Chemometrics College of Semiconductor (College of Integrated Circuit) Hunan University  Changsha China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4553-6338","authenticated-orcid":false,"given":"Xuming","family":"Zou","sequence":"additional","affiliation":[{"name":"Key Laboratory for Micro\/Nano Optoelectronic Devices of Ministry of Education &amp; Hunan Provincial Key Laboratory of Low\u2010Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University  Changsha China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-0170-1899","authenticated-orcid":false,"given":"Anthony","family":"Cabanillas","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering University at Buffalo The State University of New York  Buffalo New York USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7093-4835","authenticated-orcid":false,"given":"Huamin","family":"Li","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering University at Buffalo The State University of New York  Buffalo New York USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7399-307X","authenticated-orcid":false,"given":"Woo Jong","family":"Yu","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon Republic of Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,9,10]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41565\u2010020\u20100655\u2010z"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41578\u2010022\u201000434\u2010z"},{"key":"e_1_2_8_4_1","doi-asserted-by":"crossref","DOI":"10.1063\/1.3634052","article-title":"Ferroelectricity in Hafnium Oxide Thin Films","volume":"99","author":"B\u00f6scke T.","year":"2011","journal-title":"Applied Physics Letters"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010023\u201001064\u20101"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202503877"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202516115"},{"key":"e_1_2_8_8_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202409822"},{"key":"e_1_2_8_9_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202206864"},{"key":"e_1_2_8_10_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41598\u2010018\u201021057\u2010x"},{"key":"e_1_2_8_11_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3054"},{"key":"e_1_2_8_12_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202206042"},{"key":"e_1_2_8_13_1","doi-asserted-by":"crossref","DOI":"10.1126\/sciadv.abe1341","article-title":"CMOS\u2010Compatible Ferroelectric NAND Flash Memory for High\u2010Density, Low\u2010Power, and High\u2010Speed Three\u2010Dimensional Memory","volume":"7","author":"Kim M.\u2010K.","year":"2021","journal-title":"Science Advances"},{"key":"e_1_2_8_14_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201907826"},{"key":"e_1_2_8_15_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41467\u2010022\u201030564\u20105"},{"key":"e_1_2_8_16_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202311767"},{"key":"e_1_2_8_17_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41586\u2010022\u201005524\u20100"},{"key":"e_1_2_8_18_1","doi-asserted-by":"publisher","DOI":"10.1080\/08982112.2023.2238049"},{"key":"e_1_2_8_19_1","doi-asserted-by":"crossref","DOI":"10.1063\/5.0035515","article-title":"Ferroelectric Field Effect Transistors: Progress and Perspective","volume":"9","author":"Kim J. 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