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For all nanowire\u2010based ion\u2010sensitive field\u2010effect transistors (ISFETs), direct electrolyte contact or passivation by amorphous dielectrics often introduces interfacial traps leading to instabilities, reduced capacitive control, and poor switching. In this work, we fabricated performance\u2010enhanced ISFETs from ultrathin, highly crystalline tellurium nanowires (TeNW), which are known for their unique, quasi one\u2010dimensional (1D) van der Waals structure. The TeNW networks were passivated with ultra\u2010thin films of insulating graphene oxide (GO). This van der Waals integration enabled high\u2010performance ISFET arrays, which exhibit strongly enhanced p\u2010type field\u2010effect characteristics, clearly outperforming TeNW ISFETs with direct electrolyte contact and those passivated by amorphous silicon dioxide. We account for this performance enhancement by a van der Waals interaction between the 1D TeNW and 2D GO. The resulting TeNW\/GO\u2010ISFETs demonstrate stable operation in phosphate\u2010buffered saline, while exhibiting apparent pH sensitivities of up to 290\u00a0mV\/pH, significantly exceeding the Nernstian limit as an effect of the van der Waals interaction. Our findings demonstrate that this van der Waals integration is a viable strategy for performance\u2010enhanced tellurium ISFETs, paving the way for next\u2010generation bioelectronics in healthcare diagnostics and environmental monitoring.<\/jats:p>","DOI":"10.1002\/smll.75853","type":"journal-article","created":{"date-parts":[[2026,9,25]],"date-time":"2026-09-25T14:38:53Z","timestamp":1790347133000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Van der Waals Integration of Tellurium Nanowires With Graphene Oxide for Performance\u2010Enhanced Ion\u2010Sensitive Field\u2010Effect Transistors"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4768-5011","authenticated-orcid":false,"given":"Heping","family":"Cui","sequence":"first","affiliation":[{"name":"Institute of Materials in Electrical Engineering 1 RWTH Aachen University  Aachen 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