{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T15:59:48Z","timestamp":1790265588085,"version":"4.1.0"},"reference-count":63,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T00:00:00Z","timestamp":1790208000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T00:00:00Z","timestamp":1790208000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["ECCS\u20101542148"],"award-info":[{"award-number":["ECCS\u20101542148"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Tellurium (Te) is a p\u2010type semiconductor with a narrow bandgap, promising for infrared optoelectronics. This work presents a solution\u2010based synthesis of novel single\u2010crystal Te nanocubes and polycrystalline films. Te is dissolved in ethylenediamine\u2010ethanethiol, mixed with ethanolamine, and spin\u2010coated to form nanocrystals and films. We achieved monodispersed single\u2010crystal Te nanocubes \u223c500\u2013900\u00a0nm in size, confirmed by electron microscopy and diffraction. The crystal morphology can be tuned by the annealing temperature and air exposure time. We show patterning of Te nanocubes by exploiting the deposition dependence on the substrate's wetting properties. We also demonstrate \u223c500\u00a0nm thick polycrystalline Te films processed in air at 150\u00b0C. The Te films exhibit p\u2010type behavior, an electrical resistivity of 0.115 \u03a9\u00b7cm, and photoconductance at wavelengths up to 2100\u00a0nm without optical cavities or complex gain mechanisms. The films exhibit responsivities of 0.93 A W\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>1<\/jats:sup>\n                    at 1720\u00a0nm and 137 mA W\n                    <jats:sup>\u2212<\/jats:sup>\n                    <jats:sup>1<\/jats:sup>\n                    at 2100\u00a0nm under intensities of 0.98 and 6.4\u00a0mW\/cm\n                    <jats:sup>2<\/jats:sup>\n                    , respectively. The large dark current remains a limitation for the current photoconductor configuration, but device engineering can improve speed and ON\/OFF ratio. Overall, this low\u2010temperature method provides an alternative, cost\u2010effective pathway for Te\u2010based infrared optoelectronics beyond the operating ranges of Si, Ge, and conventional InGaAs.\n                  <\/jats:p>","DOI":"10.1002\/smll.75873","type":"journal-article","created":{"date-parts":[[2026,9,24]],"date-time":"2026-09-24T15:02:26Z","timestamp":1790262146000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Solution Processed Tellurium Single\u2010Crystal Nanocubes and Polycrystalline Films for 2 \u00b5m Wavelength Infrared Photodetection"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0009-0002-0424-3360","authenticated-orcid":false,"given":"Suraj K.","family":"Patel","sequence":"first","affiliation":[{"name":"Aiiso Yufeng Li Family Department of Chemical and Nano Engineering Center for Memory and Recording Research University of California  San Diego California 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of Electrical and Computer Engineering University of California  San Diego California USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2786-6563","authenticated-orcid":false,"given":"Kenji","family":"Nomura","sequence":"additional","affiliation":[{"name":"Materials Science and Engineering program Jacobs School of Engineering University of California  San Diego California USA"},{"name":"Department of Electrical and Computer Engineering University of California  San Diego California USA"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4602-1627","authenticated-orcid":false,"given":"Yu\u2010hwa","family":"Lo","sequence":"additional","affiliation":[{"name":"Materials Science and Engineering program Jacobs School of Engineering University of California  San Diego California USA"},{"name":"Department of Electrical and Computer Engineering University of California  San Diego California 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