{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T15:59:12Z","timestamp":1790179152416,"version":"4.1.0"},"reference-count":55,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T00:00:00Z","timestamp":1790121600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T00:00:00Z","timestamp":1790121600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62375057"],"award-info":[{"award-number":["62375057"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62004071"],"award-info":[{"award-number":["62004071"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2024YFB3614400"],"award-info":[{"award-number":["2024YFB3614400"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Mixed\u2010dimensional heterostructures represent an ideal platform for high\u2010performance optoelectronics by integrating two\u2010dimensional material with conventional semiconductors. However, synergistically balancing efficient charge separation, dark\u2010current suppression, and polarization sensitivity remains a primary challenge for practical applications. Herein, a high\u2010performance 1T'\u2010MoTe\n                    <jats:sub>2<\/jats:sub>\n                    \/WS\n                    <jats:sub>2<\/jats:sub>\n                    \/p\u2010GaAs dual\u2010heterojunction photodetector is demonstrated by integrating a lateral 1T'\u2010MoTe\n                    <jats:sub>2<\/jats:sub>\n                    \/WS\n                    <jats:sub>2<\/jats:sub>\n                    junction atop an isolated p\u2010GaAs substrate. By the band\u2010modulation effect of GaAs, back\u2010to\u2010back built\u2010in electric fields are constructed at the interfaces. This dual\u2010field synergistic mechanism enables dark\u2010current suppression while significantly enhancing carrier separation efficiency, effectively mitigating the trade\u2010off between noise suppression and signal collection in mixed\u2010dimensional devices. Consequently, it achieves a responsivity of 0.24 A\/W, an external quantum efficiency of 81.9%, and a specific detectivity of 4.94 \u00d7 10\n                    <jats:sup>11<\/jats:sup>\n                    Jones under 365\u00a0nm illumination at zero bias. Driven by the carrier transport transition from diffusion to drift mode, the device exhibits field\u2010enhanced polarization sensitivity, with the polarization ratio surging from 1.95 (0\u00a0V) to 3.69 (\u22122\u00a0V) under 405\u00a0nm illumination. By virtue of its excellent polarization characteristics, we demonstrate a proof\u2010of\u2010concept convolutional neural network\u2010assisted intelligent polarization\u2010encoded system with a recognition accuracy of 91.1%. This work reveals the physics of mixed\u2010dimensional dual\u2010heterojunctions, establishing a foundation for next\u2010generation intelligent sensing and physical\u2010layer information security.\n                  <\/jats:p>","DOI":"10.1002\/smll.75885","type":"journal-article","created":{"date-parts":[[2026,9,23]],"date-time":"2026-09-23T14:59:57Z","timestamp":1790175597000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Synergistic Dual Built\u2010In Electric Fields Empower Mixed\u2010Dimensional 1T'\u2010MoTe\n                    <sub>2<\/sub>\n                    \/WS\n                    <sub>2<\/sub>\n                    \/p\u2010GaAs Photodetectors with Field\u2010Enhanced High Polarization Sensitivity for Intelligent Polarization\u2010Encoded 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Science and Engineering (School of Microelectronics) South China Normal University  Foshan Guangdong People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Min","family":"Liao","sequence":"additional","affiliation":[{"name":"School of Integrated Circuits and Information Engineering Guangdong Polytechnic Normal University  Guangzhou People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zihao","family":"Zhang","sequence":"additional","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics) South China Normal University  Foshan Guangdong People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Peiyang","family":"Han","sequence":"additional","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics) South China Normal University  Foshan Guangdong People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-6134-7529","authenticated-orcid":false,"given":"Zuocheng","family":"Pu","sequence":"additional","affiliation":[{"name":"School of Materials and Energy Guangdong University of Technology  Guangzhou People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chaoyang","family":"Liu","sequence":"additional","affiliation":[{"name":"College of Optical Science and Engineering Zhejiang University  Hangzhou People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1699-2425","authenticated-orcid":false,"given":"Zhaoqiang","family":"Zheng","sequence":"additional","affiliation":[{"name":"School of Materials and Energy Guangdong University of Technology  Guangzhou People's Republic of 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and Chemical Engineering Guangzhou University  Guangzhou People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Lu","family":"Zhang","sequence":"additional","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics) South China Normal University  Foshan Guangdong People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jingbo","family":"Li","sequence":"additional","affiliation":[{"name":"College of Optical Science and Engineering Zhejiang University  Hangzhou People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8159-3957","authenticated-orcid":false,"given":"Wei","family":"Gao","sequence":"additional","affiliation":[{"name":"Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and 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