{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T06:57:15Z","timestamp":1790751435176,"version":"4.1.0"},"reference-count":79,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,29]],"date-time":"2026-09-29T00:00:00Z","timestamp":1790640000000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by-nc-nd\/4.0\/"},{"start":{"date-parts":[[2026,9,29]],"date-time":"2026-09-29T00:00:00Z","timestamp":1790640000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100000038","name":"Natural Sciences and Engineering Research Council of Canada","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100000038","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Transition metal dichalcogenides (TMDs) are emerging layered materials suited for applications in electronics, optoelectronics, and sensing thanks to their semiconductor nature. More recently, electric\u2010field tuning of surface carrier density through carrier accumulation or depletion in TMDs\u2010based field\u2010effect\u2010transistor devices has been attracting a great deal of interest as a new method to control superconductivity in this class of materials. Such results were achieved by means of ionic liquids (ILs) acting as a gating medium for MoS\n                    <jats:sub>2<\/jats:sub>\n                    crystals. Despite the intensive use of ILs for gating TMDs\u2010based transistors, the impact of the chemical structure of the ions on the induced charge density, a key parameter for controlling the critical temperature (\n                    <jats:italic>T<\/jats:italic>\n                    <jats:sub>c<\/jats:sub>\n                    ) in superconducting MoS\n                    <jats:sub>2<\/jats:sub>\n                    crystals, is still lacking. Here we demonstrate that ionic liquid gating of MoS\n                    <jats:sub>2<\/jats:sub>\n                    channels using [EMIM][TFSI] or [EMIM][BF\n                    <jats:sub>4<\/jats:sub>\n                    ] can lead to different carrier densities. [TFSI]\u2010based systems exhibit steeper voltage decay (compared to [BF\n                    <jats:sub>4<\/jats:sub>\n                    ]\u2010based systems) meaning the potential drops more rapidly across the electric double layer, indicating stronger local electric fields and more efficient charge accumulation in the MoS\n                    <jats:sub>2<\/jats:sub>\n                    channel. Our findings represent the first, yet important, step that paves the way towards controlling charge carrier densities on demand in TMDs by chemical design of the anion and cation pair.\n                  <\/jats:p>","DOI":"10.1002\/smll.75923","type":"journal-article","created":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T06:07:01Z","timestamp":1790748421000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Ionic Liquids at the Interface With the Transition Metal Dichalcogenide MoS\n                    <sub>2<\/sub>\n                    : Effect of the Chemical Structure on Induced Charge Carrier Density"],"prefix":"10.1002","author":[{"given":"Anoir","family":"Hamdi","sequence":"first","affiliation":[{"name":"Institut national de la recherche scientifique Centre \u00c9nergie Mat\u00e9riaux T\u00e9l\u00e9communications  Varennes Quebec Canada"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ir\u00e9n\u00e9 Amiehe","family":"Essomba","sequence":"additional","affiliation":[{"name":"Universit\u00e9 de Strasbourg, CNRS Institut de Physique et Chimie des Mat\u00e9riaux de Strasbourg Strasbourg France"},{"name":"ADYNMAT CNRS Consortium  Strasbourg France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6637-5604","authenticated-orcid":false,"given":"Kana","family":"Ishisone","sequence":"additional","affiliation":[{"name":"Universit\u00e9 de Strasbourg, CNRS Institut de Physique et Chimie des Mat\u00e9riaux de Strasbourg Strasbourg France"},{"name":"ADYNMAT CNRS Consortium  Strasbourg France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Kerstin","family":"Falk","sequence":"additional","affiliation":[{"name":"Fraunhofer IWM, MikroTribologie Centrum \u00b5TC  Freiburg Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Michael","family":"Moseler","sequence":"additional","affiliation":[{"name":"Fraunhofer IWM, MikroTribologie Centrum \u00b5TC  Freiburg Germany"},{"name":"University of Freiburg Institute of Physics, Herrmann\u2010Herder\u2010Stra\u00dfe 3  Freiburg Germany"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8498-7476","authenticated-orcid":false,"given":"Ramin Karimi","family":"Azari","sequence":"additional","affiliation":[{"name":"Polytechnique Montr\u00e9al  Montr\u00e9al Quebec Canada"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Tian","family":"Lan","sequence":"additional","affiliation":[{"name":"Polytechnique Montr\u00e9al  Montr\u00e9al Quebec Canada"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6731-0538","authenticated-orcid":false,"given":"Clara","family":"Santato","sequence":"additional","affiliation":[{"name":"Polytechnique Montr\u00e9al  Montr\u00e9al Quebec Canada"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5052-2849","authenticated-orcid":false,"given":"Mauro","family":"Boero","sequence":"additional","affiliation":[{"name":"ADYNMAT CNRS Consortium  Strasbourg France"},{"name":"CNRS, Laboratoire ICube Universit\u00e9 de Strasbourg  Strasbourg France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-3336-8277","authenticated-orcid":false,"given":"Guido","family":"Ori","sequence":"additional","affiliation":[{"name":"Universit\u00e9 de Strasbourg, CNRS Institut de Physique et Chimie des Mat\u00e9riaux de Strasbourg Strasbourg France"},{"name":"ADYNMAT CNRS Consortium  Strasbourg France"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8232-0950","authenticated-orcid":false,"given":"Emanuele","family":"Orgiu","sequence":"additional","affiliation":[{"name":"Institut national de la recherche scientifique Centre \u00c9nergie Mat\u00e9riaux T\u00e9l\u00e9communications  Varennes Quebec Canada"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,9,29]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2012.193"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0502848102"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.105.136805"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl903868w"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.6b01309"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl2018178"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mser.2014.11.001"},{"issue":"18","key":"e_1_2_9_10_1","doi-asserted-by":"crossref","DOI":"10.1002\/adfm.201900657","article-title":"A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High\u2010 k , and Layered Dielectrics","volume":"30","author":"Palumbo F.","year":"2020","journal-title":"Advanced Functional Materials"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1774"},{"key":"e_1_2_9_12_1","volume-title":"Iontronics\u2010Field Effect Study of Different Devices, Using Techniques of Ionic Liquid Gating","author":"Seidemann J.","year":"2017"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl2021575"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1039\/C3CP50755F"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.314"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep12534"},{"issue":"4","key":"e_1_2_9_17_1","doi-asserted-by":"crossref","DOI":"10.1063\/1.4740268","article-title":"Electric\u2010Field\u2010Induced Superconductivity At 9.4\u2009K in a Layered Transition Metal Disulphide MoS 2","volume":"101","author":"Taniguchi K.","year":"2012","journal-title":"Applied Physics Letters"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1228006"},{"issue":"2","key":"e_1_2_9_19_1","doi-asserted-by":"crossref","first-page":"1197","DOI":"10.1021\/nl504314c","article-title":"Electrostatically Induced Superconductivity at the Surface of WS2","volume":"15","author":"Jo S.","year":"2015","journal-title":"Nano Letters"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.aab2277"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms9826"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2587"},{"issue":"1","key":"e_1_2_9_23_1","doi-asserted-by":"crossref","DOI":"10.1063\/1.3535613","article-title":"Liquid\u2010Gated Electric\u2010Double\u2010Layer Transistor on Layered Metal Dichalcogenide, SnS2","volume":"98","author":"Yuan H.","year":"2011","journal-title":"Applied Physics Letters"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.200801633"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.1018388108"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1021\/nl2021575"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.2c19596"},{"issue":"11","key":"e_1_2_9_28_1","doi-asserted-by":"crossref","DOI":"10.1063\/5.0016336","article-title":"Electron and Hole Mobilities in Ambipolar MoS2 Electric\u2010Double\u2010Layer Transistor","volume":"128","author":"Shimazu Y.","year":"2020","journal-title":"Journal of Applied Physics"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1021\/jp5063836"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn401053g"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2019157"},{"key":"e_1_2_9_32_1","doi-asserted-by":"crossref","DOI":"10.1002\/aelm.202000091","article-title":"Vertical\u2010Tunneling Field\u2010Effect Transistor Based on WSe 2 \u2010MoS 2 Heterostructure with Ion Gel Dielectric","volume":"6","author":"Jeon H. B.","year":"2020","journal-title":"Advanced Electronic Materials"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2008.67"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.3c01043"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep07293"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.2c08341"},{"issue":"18","key":"e_1_2_9_37_1","doi-asserted-by":"crossref","DOI":"10.1002\/aenm.201800227","article-title":"Scalable Water\u2010Based Production of Highly Conductive 2D Nanosheets with Ultrahigh Volumetric Capacitance and Rate Capability","volume":"8","author":"Jeon H.","year":"2018","journal-title":"Advanced Energy Materials"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn4047474"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202514561"},{"key":"e_1_2_9_40_1","doi-asserted-by":"publisher","DOI":"10.1039\/C5CS00517E"},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/27\/16\/165203"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevResearch.6.043066"},{"key":"e_1_2_9_43_1","doi-asserted-by":"publisher","DOI":"10.1039\/C7NR01501A"},{"issue":"16","key":"e_1_2_9_44_1","doi-asserted-by":"crossref","DOI":"10.1103\/PhysRevB.87.165402","article-title":"Origin of the n\u2010Type and p\u2010Type Conductivity of MoS 2 Monolayers on a SiO 2 Substrate","volume":"87","author":"Dolui K.","year":"2013","journal-title":"Physical Review B"},{"key":"e_1_2_9_45_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn500044q"},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1039\/c4tc01673d"},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4080"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5099380"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1039\/C4NR06331G"},{"key":"e_1_2_9_50_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b03885"},{"key":"e_1_2_9_51_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpcc.3c01602"},{"key":"e_1_2_9_52_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpcc.3c08269"},{"key":"e_1_2_9_53_1","doi-asserted-by":"publisher","DOI":"10.1039\/c0cp02077j"},{"key":"e_1_2_9_54_1","doi-asserted-by":"publisher","DOI":"10.1021\/jp301399b"},{"key":"e_1_2_9_55_1","article-title":"Structural, Hydrogen Bonding and Dipolar Properties of Alkyl Imidazolium\u2010Based Ionic Liquids: A Classical and First\u2010Principles Molecular Dynamics Study","author":"Essomba I. A.","year":"2022","journal-title":"ArXiv"},{"key":"e_1_2_9_56_1","doi-asserted-by":"publisher","DOI":"10.1039\/D2CP00741J"},{"key":"e_1_2_9_57_1","volume-title":"An Introduction to Hydrogen Bonding","author":"Jeffrey G. A.","year":"1997"},{"key":"e_1_2_9_58_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jpcb.2c06947"},{"key":"e_1_2_9_59_1","doi-asserted-by":"publisher","DOI":"10.1039\/C5CP04276C"},{"key":"e_1_2_9_60_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.molstruc.2023.136859"},{"key":"e_1_2_9_61_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsomega.5c04701"},{"key":"e_1_2_9_62_1","doi-asserted-by":"publisher","DOI":"10.1021\/jp067857o"},{"key":"e_1_2_9_63_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.electacta.2008.02.065"},{"key":"e_1_2_9_64_1","doi-asserted-by":"publisher","DOI":"10.1103\/physrevlett.106.046102"},{"key":"e_1_2_9_65_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevMaterials.3.095801"},{"key":"e_1_2_9_66_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.140.A1133"},{"key":"e_1_2_9_67_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.chemrev.2c00728"},{"key":"e_1_2_9_68_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.201700059"},{"key":"e_1_2_9_69_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.55.2471"},{"key":"e_1_2_9_70_1","unstructured":"M.Boero J. M. H.O T.Ikeda et\u00a0al. OpenCPMD 2022 https:\/\/github.com\/OpenCPMD."},{"key":"e_1_2_9_71_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.43.1993"},{"key":"e_1_2_9_72_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevA.38.3098"},{"key":"e_1_2_9_73_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.37.785"},{"key":"e_1_2_9_74_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.100.053002"},{"key":"e_1_2_9_75_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4935932"},{"key":"e_1_2_9_76_1","doi-asserted-by":"publisher","DOI":"10.1021\/jp0362133"},{"key":"e_1_2_9_77_1","doi-asserted-by":"publisher","DOI":"10.1002\/cphc.200700552"},{"key":"e_1_2_9_78_1","doi-asserted-by":"publisher","DOI":"10.1021\/acs.jctc.0c01002"},{"key":"e_1_2_9_79_1","article-title":"The DL POLY 4 User Manual","volume":"4","author":"Todorov I.","year":"2011","journal-title":"STFC, STFC Daresbury Laboratory, Daresbury, Warrington, Cheshire, WA4 4AD, United Kingdom, version"},{"key":"e_1_2_9_80_1","doi-asserted-by":"publisher","DOI":"10.1006\/jcph.1995.1039"}],"container-title":["Small"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/smll.75923","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/smll.75923","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/smll.75923","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,9,30]],"date-time":"2026-09-30T06:07:05Z","timestamp":1790748425000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/smll.75923"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,9,29]]},"references-count":79,"alternative-id":["10.1002\/smll.75923"],"URL":"https:\/\/doi.org\/10.1002\/smll.75923","archive":["Portico"],"relation":{},"ISSN":["1613-6810","1613-6829"],"issn-type":[{"value":"1613-6810","type":"print"},{"value":"1613-6829","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,9,29]]},"assertion":[{"value":"2026-03-04","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-17","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-09-29","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e75923"}}