{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T07:59:32Z","timestamp":1790409572965,"version":"4.1.0"},"reference-count":36,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T00:00:00Z","timestamp":1790380800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T00:00:00Z","timestamp":1790380800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["52272145"],"award-info":[{"award-number":["52272145"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100017610","name":"Shenzhen Science and Technology Innovation Program","doi-asserted-by":"publisher","award":["SYSPG20241211173609003"],"award-info":[{"award-number":["SYSPG20241211173609003"]}],"id":[{"id":"10.13039\/501100017610","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100021171","name":"Basic and Applied Basic Research Foundation of Guangdong Province","doi-asserted-by":"publisher","award":["2023A1515012350"],"award-info":[{"award-number":["2023A1515012350"]}],"id":[{"id":"10.13039\/501100021171","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100021171","name":"Basic and Applied Basic Research Foundation of Guangdong Province","doi-asserted-by":"publisher","award":["2024A1515240030"],"award-info":[{"award-number":["2024A1515240030"]}],"id":[{"id":"10.13039\/501100021171","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100012245","name":"Science and Technology Planning Project of Guangdong Province","doi-asserted-by":"publisher","award":["2023B1212010003"],"award-info":[{"award-number":["2023B1212010003"]}],"id":[{"id":"10.13039\/501100012245","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    With the rapid development of distributed sensor systems, direct\u2010current triboelectric nanogenerators (DC\u2010TENGs) based on tribovoltaic effects have attracted wide attention. However, the development of efficient semiconductor materials for enhanced output remains challenging. Herein, air\u2010stable Sb\n                    <jats:sup>3+<\/jats:sup>\n                    doped CsBi\n                    <jats:sub>3<\/jats:sub>\n                    I\n                    <jats:sub>10<\/jats:sub>\n                    films were synthesized, and DC\u2010TENG devices based on Al\/CsBi\n                    <jats:sub>2.7<\/jats:sub>\n                    Sb\n                    <jats:sub>0.3<\/jats:sub>\n                    I\n                    <jats:sub>10<\/jats:sub>\n                    dynamic Schottky junction were then developed for harvesting mechanical and solar energy. Among a series of Sb\n                    <jats:sup>3+<\/jats:sup>\n                    doping concentrations, the CsBi\n                    <jats:sub>2.7<\/jats:sub>\n                    Sb\n                    <jats:sub>0.3<\/jats:sub>\n                    I\n                    <jats:sub>10<\/jats:sub>\n                    film exhibits the narrowest FWHM (Full Width at Half Maximum) value and the best crystallinity. Being ascribed to more suitable energy\u2010level alignment, reduced trap states, and especially increased dielectric constant, the optimized Al\/CsBi\n                    <jats:sub>2.7<\/jats:sub>\n                    Sb\n                    <jats:sub>0.3<\/jats:sub>\n                    I\n                    <jats:sub>10<\/jats:sub>\n                    DC\u2010TENG delivers a short\u2010circuit current density of 31.4 A m\n                    <jats:sup>\u22122<\/jats:sup>\n                    and an open\u2010circuit voltage of 4.3\u00a0V under dark conditions, with respective increase of approximately 29.8% and 26.5% compared with the Al\/CsBi\n                    <jats:sub>3<\/jats:sub>\n                    I\n                    <jats:sub>10<\/jats:sub>\n                    DC\u2010TENG. Under simulated sunlight illumination, the output further increases to 44.1 A m\n                    <jats:sup>\u22122<\/jats:sup>\n                    and 7.5\u00a0V, which is attributed to the contribution of photogenerated carriers during the dynamic contact process. Moreover, the device maintains stable output performance after being placed in ambient air for 49 days. This work provides a feasible strategy for developing lead\u2010free perovskite semiconductor\u2010based DC\u2010TENGs with enhanced electrical output and multi\u2010energy harvesting capability.\n                  <\/jats:p>","DOI":"10.1002\/smll.75952","type":"journal-article","created":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T07:30:12Z","timestamp":1790407812000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["High\u2010Current\u2010Density and Photo\u2010Enhanced Direct\u2010Current Triboelectric Nanogenerator Based on Lead\u2010Free Air\u2010Stable Sb\n                    <sup>3+<\/sup>\n                    doped CsBi\n                    <sub>3<\/sub>\n                    I\n                    <sub>10<\/sub>\n                    Perovskite"],"prefix":"10.1002","author":[{"given":"Xue\u2010Ju","family":"Huang","sequence":"first","affiliation":[{"name":"Shenzhen Key Laboratory of New Materials Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"},{"name":"Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhan","family":"Wei","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of New Materials Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"},{"name":"Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Shunyu","family":"Yu","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of New Materials Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"},{"name":"Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ling","family":"Ding","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of New Materials Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"},{"name":"Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yanhong","family":"Zhou","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of New Materials Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"},{"name":"Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8606-8986","authenticated-orcid":false,"given":"Gui\u2010Gen","family":"Wang","sequence":"additional","affiliation":[{"name":"Shenzhen Key Laboratory of New Materials Technology School of Materials Science and Engineering Harbin Institute of Technology (Shenzhen)  Shenzhen People's Republic of China"},{"name":"Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic 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