{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T07:59:32Z","timestamp":1790409572938,"version":"4.1.0"},"reference-count":62,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T00:00:00Z","timestamp":1790380800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T00:00:00Z","timestamp":1790380800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100002858","name":"China Postdoctoral Science Foundation","doi-asserted-by":"publisher","award":["2025M770546"],"award-info":[{"award-number":["2025M770546"]}],"id":[{"id":"10.13039\/501100002858","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    The von Neumann bottleneck limits energy\u2010efficient computing. While ferroelectric hafnium zirconium oxide (HZO) memories are promising for in\u2010memory computing, achieving high speed, endurance, and reliable multilevel control remains challenging. This work addresses these challenges through interfacial engineering with an ultrathin ZrO\n                    <jats:sub>2<\/jats:sub>\n                    seed layer. Atomic\u2010resolution microscopy reveals that this interlayer promotes preferential\n                    <jats:italic>c<\/jats:italic>\n                    \u2010axis orientation of the ferroelectric orthorhombic phase, aligning the polarization axis with the applied electric field. This enables nanosecond (6\u00a0ns) switching, long\u2010term retention (&gt;10\n                    <jats:sup>4<\/jats:sup>\n                    s), and stable programming of 10 distinct polarization states. Based on these capabilities, we demonstrate an in\u2010memory differentiator within a single device. Analog values encoded as discrete polarization levels enable direct first\u2010 and second\u2010order derivative calculations, where the transient switching current represents the differential output. This atomic\u2010scale structural control provides a materials\u2010to\u2010system link that may facilitate real\u2010time, energy\u2010efficient data processing.\n                  <\/jats:p>","DOI":"10.1002\/smll.75990","type":"journal-article","created":{"date-parts":[[2026,9,26]],"date-time":"2026-09-26T07:30:13Z","timestamp":1790407813000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Multistate Ferroelectric Memory for in\u2010Memory Differential Computing in\n                    <i>C<\/i>\n                    \u2011Axis\u2011Oriented HZO\u2011ZrO\n                    <sub>2<\/sub>\n                    Films Enabled by Interfacial Engineering"],"prefix":"10.1002","author":[{"given":"Xianyu","family":"Hu","sequence":"first","affiliation":[{"name":"College of Integrated Circuits and Micro\/Nano Electronics Innovation Fudan University  Shanghai 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