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Two\u2010dimensional (2D) MoS\n                    <jats:sub>2<\/jats:sub>\n                    (molybdenum disulfide) stands out as a promising candidate due to its compatibility with CMOS (Complementary Metal Oxide Semiconductor) back\u2010end\u2010of\u2010line processes, which are well\u2010established in microelectronics fabrication. It is experimentally suggested that bilayer MoS\n                    <jats:sub>2<\/jats:sub>\n                    exhibits an ultra\u2010high\u2010power factor (\n                    <jats:italic>PF<\/jats:italic>\n                    ) of 85 \u00b5W cm\n                    <jats:sup>\u22121<\/jats:sup>\n                    K\n                    <jats:sup>\u22122<\/jats:sup>\n                    , which is attributed to its optimized electronic band structure and higher density of states near the Fermi level (\n                    <jats:italic>E<\/jats:italic>\n                    <jats:sub>F<\/jats:sub>\n                    ). However, experimental figure of merit (\n                    <jats:italic>zT<\/jats:italic>\n                    ) values for most MoS\n                    <jats:sub>2<\/jats:sub>\n                    \u2010based mesoscale materials still remain low, typically below 0.2 near room temperature, due to the intrinsic high thermal conductivity of 2D MoS\n                    <jats:sub>2<\/jats:sub>\n                    and uncontrolled dimensionality in MoS\n                    <jats:sub>2<\/jats:sub>\n                    bulks. This review summarizes recent advances in the methods for preparing the MoS\n                    <jats:sub>2<\/jats:sub>\n                    \u2010based TE materials and the strategies for tuning the TE performance of MoS\n                    <jats:sub>2<\/jats:sub>\n                    through doping, intercalation, hetero\u2010structuring, and unique microstructure optimization strategies. In the end, current challenges and future perspectives regarding the further improvement of\n                    <jats:italic>zT<\/jats:italic>\n                    values for MoS\n                    <jats:sub>2<\/jats:sub>\n                    and the commercialization of CMOS\u2010compatible, high\u2010performance MoS\n                    <jats:sub>2<\/jats:sub>\n                    \u2010based TE devices are discussed.\n                  <\/jats:p>","DOI":"10.1002\/smll.76042","type":"journal-article","created":{"date-parts":[[2026,10,4]],"date-time":"2026-10-04T13:18:20Z","timestamp":1791119900000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["MoS\n                    <sub>2<\/sub>\n                    \u2010Based Thermoelectric Materials: Current Advances and Future Prospects in Micro\u2010Thermoelectric Devices"],"prefix":"10.1002","author":[{"given":"Yan","family":"Gu","sequence":"first","affiliation":[{"name":"State Key Laboratory of New Ceramics Materials School of Materials Science and Engineering Tsinghua University  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1765-2852","authenticated-orcid":false,"given":"Jia","family":"Liang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Ceramics Materials School of Materials Science and Engineering Tsinghua University  Beijing China"},{"name":"School of Chemistry and Chemical Engineering Guangxi Key Laboratory of Electrochemical Energy Materials Guangxi University  Nanning China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7403-4954","authenticated-orcid":false,"given":"Xiangyang","family":"Liu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of New Ceramics Materials School of 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