{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T11:50:26Z","timestamp":1791373826043,"version":"4.3.1"},"reference-count":51,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T00:00:00Z","timestamp":1791331200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T00:00:00Z","timestamp":1791331200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    Precise nanoscale control of molybdenum (Mo) etching is critical for state\u2010of\u2010the\u2010art interconnects, 3D NAND, and other key applications like back\u2010side power delivery network. Herein, we demonstrate a controllable, nanoscale etching process for Mo films using a cyclic stepwise CHF\n                    <jats:sub>3<\/jats:sub>\n                    \/O\n                    <jats:sub>2<\/jats:sub>\n                    plasma approach. Compared to continuous etching, cyclic stepwise etching achieves exceptional etching linearity (R\n                    <jats:sup>2<\/jats:sup>\n                    = 0.999) with a precisely tunable etch depth per cycle ranging from 0.74\u00a0nm\/cycle at 45\u00a0W to 1.71\u00a0nm\/cycle at 90\u00a0W. Furthermore, the cyclic process significantly improves surface quality, reducing root\u2010mean\u2010square roughness by 8.8% and peak\u2010to\u2010valley roughness by 24.3% compared to the as\u2010deposited film. Surface analysis and density functional theory calculations reveal that the process is enabled by a dynamic synergy between surface oxidation and polymer\u2010regulated fluorination. Comprehensive characterization results suggest that the cyclic etching process preserves the crystalline structure and chemical purity of the remaining Mo film. This work provides a promising pathway toward precise and tunable Mo etching processes for the next\u2010generation Mo\u2010based interconnect architectures.\n                  <\/jats:p>","DOI":"10.1002\/smll.76133","type":"journal-article","created":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T10:57:10Z","timestamp":1791370630000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Controllable and Nanoscale Linear Etching of Atomic Layer Deposited Molybdenum Using Cyclic Stepwise CHF\n                    <sub>3<\/sub>\n                    \/O\n                    <sub>2<\/sub>\n                    Plasma"],"prefix":"10.1002","author":[{"given":"Boao","family":"Ma","sequence":"first","affiliation":[{"name":"College of Integrated Circuits and Micro\u2010Nano Electronics Fudan University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Haijun","family":"Cheng","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Micro\u2010Nano Electronics Fudan University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0009-3677-9523","authenticated-orcid":false,"given":"Xinwei","family":"Wu","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Micro\u2010Nano Electronics Fudan University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiancheng","family":"Sun","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Micro\u2010Nano Electronics Fudan University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jin","family":"Xu","sequence":"additional","affiliation":[{"name":"College of Integrated Circuits and Micro\u2010Nano Electronics Fudan University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6004-7167","authenticated-orcid":false,"given":"Xin\u2010Ping","family":"Qu","sequence":"additional","affiliation":[{"name":"School of Microelectronics Fudan University  Shanghai China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,10,7]]},"reference":[{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1002\/advs.202207321"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4942216"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5133671"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2025.163208"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1002\/smll.202406713"},{"key":"e_1_2_8_7_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.adk6189"},{"key":"e_1_2_8_8_1","doi-asserted-by":"crossref","unstructured":"C.Adelmann L. 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