{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T11:54:51Z","timestamp":1792065291606,"version":"4.4.0"},"reference-count":35,"publisher":"Wiley","license":[{"start":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T00:00:00Z","timestamp":1792022400000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"},{"start":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T00:00:00Z","timestamp":1792022400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100021171","name":"Basic and Applied Basic Research Foundation of Guangdong Province","doi-asserted-by":"publisher","award":["2025A1515012967"],"award-info":[{"award-number":["2025A1515012967"]}],"id":[{"id":"10.13039\/501100021171","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62474116"],"award-info":[{"award-number":["62474116"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100004826","name":"Natural Science Foundation of Beijing Municipality","doi-asserted-by":"publisher","award":["L257012"],"award-info":[{"award-number":["L257012"]}],"id":[{"id":"10.13039\/501100004826","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small"],"abstract":"<jats:title>ABSTRACT<\/jats:title>\n                  <jats:p>\n                    The increasing power densities of artificial intelligence and high\u2010performance computing (HPC) chips place stringent demands on thermal interface materials (TIMs), which are designed to combine efficient heat transport with interfacial conformability, stress relaxation, and long\u2010term reliability. Conventional silicone\u2010based TIMs can suffer from oil bleeding, pump\u2010out, and insufficient adhesion during prolonged thermal exposure. Here, a conversion\u2010controlled poly(ionic liquid)\/aluminum nitride (PIL\/AlN) thermal gel is developed by partially polymerizing the PIL matrix. The resulting chain\u2010entangled PIL framework retains residual monomer and oligomer species that provide internal plasticization, promote interfacial wetting, and facilitate stress relaxation, while densely packed spherical AlN particles establish heat\u2010transfer pathways. After optimization of polymerization time and filler loading, the 55 vol% AlN composite exhibits an elongation\u2010at\u2010break of 291%, adhesion strengths of 5.4\u00a0MPa on Cu and 3.7\u00a0MPa on Si, and a bulk thermal conductivity of 2.0 W\u00b7m\n                    <jats:sup>\u22121<\/jats:sup>\n                    \u00b7K\n                    <jats:sup>\u22121<\/jats:sup>\n                    . Its mechanical compliance enables intimate contact with Si, yielding an interfacial thermal resistance of (2.93 \u00b1 0.96) \u00d7 10\n                    <jats:sup>\u22126<\/jats:sup>\n                    K\u00b7m\n                    <jats:sup>2<\/jats:sup>\n                    \u00b7W\n                    <jats:sup>\u22121<\/jats:sup>\n                    . T3Ster cycling and high\u2010temperature aging further show stable device\u2010level thermal responses and no detectable macroscopic defects under the tested conditions. This conversion\u2010controlled strategy provides a route to silicone\u2010free TIMs that combine mechanical compliance, interfacial adhesion, low interfacial thermal resistance, and operational stability.\n                  <\/jats:p>","DOI":"10.1002\/smll.76290","type":"journal-article","created":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T11:17:23Z","timestamp":1792063043000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Conversion\u2010Controlled Poly(Ionic Liquid)\/Aluminum Nitride Thermal Interface Materials with Internal Plasticization for Reliable Chip\u2010Level Thermal Management"],"prefix":"10.1002","author":[{"given":"Longfeng","family":"Zou","sequence":"first","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences  Shenzhen China"},{"name":"University of Chinese Academy of Sciences  Beijing China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yucheng","family":"Jiang","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Taoying","family":"Rao","sequence":"additional","affiliation":[{"name":"Research Institute of Materials Science South China University of Technology  Guangzhou China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Siying","family":"He","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Long","family":"Teng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3683-5865","authenticated-orcid":false,"given":"Yilan","family":"Guo","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4888-2685","authenticated-orcid":false,"given":"Pengli","family":"Zhu","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6567-1396","authenticated-orcid":false,"given":"Yimin","family":"Yao","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Materials for Integrated Circuits Shenzhen Institute of Advanced Electronic Materials Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences  Shenzhen China"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2026,10,15]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.1038\/s44287\u2010025\u201000196\u20100"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010024\u201001175\u20103"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/s41928\u2010025\u201001543\u20107"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1002\/sus2.239"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.3390\/nano12193365"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1039\/D2MH00276K"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.scib.2026.03.011"},{"key":"e_1_2_9_9_1","doi-asserted-by":"publisher","DOI":"10.1002\/inf2.70139"},{"key":"e_1_2_9_10_1","doi-asserted-by":"publisher","DOI":"10.1002\/admt.202501321"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.202311335"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.4c14916"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.6b16586"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.compscitech.2019.03.017"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1007\/s40820\u2010022\u201000979\u20102"},{"key":"e_1_2_9_16_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202214071"},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.70401\/tx.2026.0023"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.cej.2024.158246"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1039\/C6CS00620E"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202314408"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.progpolymsci.2013.04.002"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1002\/anie.202212512"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1039\/D1MH00461A"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.2738\/ENGTM.2026.0001"},{"key":"e_1_2_9_25_1","doi-asserted-by":"publisher","DOI":"10.1002\/marc.202000098"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1146\/annurev.fluid.36.050802.122132"},{"key":"e_1_2_9_27_1","doi-asserted-by":"publisher","DOI":"10.1146\/annurev\u2010conmatphys\u2010031620\u2010105938"},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.cis.2008.09.005"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.202211985"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3212673"},{"key":"e_1_2_9_31_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5046944"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1063\/5.0213738"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsaelm.4c00691"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.4c05258"},{"key":"e_1_2_9_35_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.compscitech.2026.111786"},{"key":"e_1_2_9_36_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.5c20168"}],"container-title":["Small"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/smll.76290","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/smll.76290","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/smll.76290","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,10,15]],"date-time":"2026-10-15T11:17:24Z","timestamp":1792063044000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/smll.76290"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,10,15]]},"references-count":35,"alternative-id":["10.1002\/smll.76290"],"URL":"https:\/\/doi.org\/10.1002\/smll.76290","archive":["Portico"],"relation":{},"ISSN":["1613-6810","1613-6829"],"issn-type":[{"value":"1613-6810","type":"print"},{"value":"1613-6829","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,10,15]]},"assertion":[{"value":"2026-08-14","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-10-08","order":2,"name":"accepted","label":"Accepted","group":{"name":"publication_history","label":"Publication History"}},{"value":"2026-10-15","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"e76290"}}