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This major breakthrough is achieved due to the development of state\u2010of\u2010the\u2010art epitaxial growth technology culminating in superior monocrystalline quality of the s\u2010Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s\u2010Ge appears to be \u22482 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective <jats:italic>g<\/jats:italic>*\u2010factor (&gt;18), a very low percolation density (5\u2009\u00d7\u200910<jats:sup>9<\/jats:sup>\u2009cm<jats:sup>\u22122<\/jats:sup>) and a small effective mass (0.054\u2009<jats:italic>m<\/jats:italic>\n<jats:sub>0<\/jats:sub>). This long\u2010sought combination of parameters in one material system is important for the research and development of low\u2010temperature electronics with reduced Joule heating and for quantum\u2010electronics circuits based on spin qubits.<\/jats:p><\/jats:sec>","DOI":"10.1002\/smsc.202200094","type":"journal-article","created":{"date-parts":[[2023,3,3]],"date-time":"2023-03-03T05:06:20Z","timestamp":1677819980000},"source":"Crossref","is-referenced-by-count":46,"title":["Holes Outperform Electrons in Group IV Semiconductor Materials"],"prefix":"10.1002","volume":"3","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7757-2187","authenticated-orcid":false,"given":"Maksym","family":"Myronov","sequence":"first","affiliation":[{"name":"Physics Department The University of Warwick  Coventry CV4 7AL UK"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jan","family":"Kycia","sequence":"additional","affiliation":[{"name":"Physics and Astronomy Department University of 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