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SOT can switch the magnetization direction in a material system with broken inversion symmetry, such as a normal metal (NM)\/ferromagnet (FM) heterojunction. The SOT consists of two mutually orthogonal vector components along with the injected current direction: the transverse damping\u2010like torque (DLT) and the longitudinal field\u2010like torque (FLT). Numerous studies have mainly centered on the DLT for the SOT switching mechanism. However, DLT and FLT are essential to enhance SOT efficiency because FLT boosts the magnetization precession motion. Herein, heterojunctions consisting of NM 1 (Ta, W, or Pt)\/NM 2 (Nb)\/FM (CoFeB) are devised to manipulate the FLT\u2010to\u2010DLT ratio (<jats:italic>\u03b7<\/jats:italic>) through the change in Nb thickness. Furthermore, experimental confirmation exists for reducing threshold current as <jats:italic>\u03b7<\/jats:italic> increases. The SOT devices with substantial <jats:italic>\u03b7<\/jats:italic> generate random numbers. The National Institute of Standards and Technology Special Publication 800\u201090B test verifies randomness and confirms that the SOT devices are beneficial sources for true random number generators (TRNGs). These findings indicate the crucial role of FLT in the SOT switching process and underscore its significance in developing SOT\u2010based TRNG devices.<\/jats:p>","DOI":"10.1002\/smsc.202300224","type":"journal-article","created":{"date-parts":[[2023,12,16]],"date-time":"2023-12-16T03:25:40Z","timestamp":1702697140000},"source":"Crossref","is-referenced-by-count":3,"title":["Reduction of Operating Current by Harnessing the Field\u2010 and Damping\u2010Like Torque Ratios in Nonmagnet\u2013Ferromagnet Heterojunctions"],"prefix":"10.1002","volume":"4","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8261-801X","authenticated-orcid":false,"given":"Min Hyeok","family":"Lee","sequence":"first","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-5108-3625","authenticated-orcid":false,"given":"Seok-Jong","family":"Kim","sequence":"additional","affiliation":[{"name":"Department of Physics Korea Advanced Institute of Science and Technology (KAIST)  Daejeon 34141 Republic of Korea"},{"name":"Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST)  Daejeon 34141 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4319-0460","authenticated-orcid":false,"given":"Seok In","family":"Yoon","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4066-711X","authenticated-orcid":false,"given":"Jeong Kyu","family":"Lee","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7474-0787","authenticated-orcid":false,"given":"Han Seok","family":"Ko","sequence":"additional","affiliation":[{"name":"Department of Materials Science and Engineering Korea University  Seoul 02841 Republic of Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9937-674X","authenticated-orcid":false,"given":"Gyusang","family":"Kim","sequence":"additional","affiliation":[{"name":"Institute of Cyber Security &amp; 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