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Herein, conductive boron\u2010doped zinc oxide (ZnO:B) films are deposited by atomic layer deposition (ALD) process and investigated as electron\u2010selective contacts, in combination with a thin SiO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub> passivating interlayer. This combination demonstrates a relative low contact resistivity of \u22482\u2009m\u03a9\u2009cm<jats:sup>2<\/jats:sup> and improved passivation quality. Further application of this SiO<jats:sub><jats:italic>x<\/jats:italic><\/jats:sub>\/ZnO:B stack as a full\u2010area electron\u2010selective passivating contact in proof\u2010of\u2010concept n\u2010type c\u2010Si solar cells results in a satisfactory power conversion efficiency of over 22.0%. This electron\u2010selective passivating contact structure, prepared via low\u2010temperature, simplified, and the compositionally controlled ALD process, offers a promising pathway for the development of high\u2010efficiency and low\u2010cost c\u2010Si solar cells.<\/jats:p>","DOI":"10.1002\/smsc.202400168","type":"journal-article","created":{"date-parts":[[2024,9,23]],"date-time":"2024-09-23T04:29:47Z","timestamp":1727065787000},"source":"Crossref","is-referenced-by-count":15,"title":["Boron\u2010Doped Zinc Oxide Electron\u2010Selective Contacts for Crystalline Silicon Solar Cells with Efficiency over 22.0%"],"prefix":"10.1002","volume":"4","author":[{"given":"Zheng","family":"Li","sequence":"first","affiliation":[{"name":"School of Materials Shenzhen Campus of Sun Yat\u2010sen University  No. 66, Gongchang Road Shenzhen Guangdong 518107 P. R. 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