{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T06:53:14Z","timestamp":1791355994582,"version":"4.3.1"},"reference-count":55,"publisher":"Wiley","issue":"10","license":[{"start":{"date-parts":[[2026,10,6]],"date-time":"2026-10-06T00:00:00Z","timestamp":1791244800000},"content-version":"vor","delay-in-days":5,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"},{"start":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T00:00:00Z","timestamp":1790812800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/doi.wiley.com\/10.1002\/tdm_license_1.1"}],"funder":[{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["2410012306"],"award-info":[{"award-number":["2410012306"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["02305570"],"award-info":[{"award-number":["02305570"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003052","name":"Ministry of Trade, Industry and Energy","doi-asserted-by":"publisher","award":["25069\u201015FC"],"award-info":[{"award-number":["25069\u201015FC"]}],"id":[{"id":"10.13039\/501100003052","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","award":["RS\u20102023\u201000260527"],"award-info":[{"award-number":["RS\u20102023\u201000260527"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Small Science"],"published-print":{"date-parts":[[2026,10]]},"abstract":"<jats:p>\n                    With the rapid growth of data\u2010centric artificial intelligence (AI), ternary content\u2010addressable memory (TCAM) has emerged as a promising platform for parallel in\u2010memory search. Here, we systematically investigate how the gate\u2010dielectric material and structural design of metal\u2013ferroelectric\u2010metal\u2013insulator\u2013semiconductor (MFMIS) ferroelectric thin\u2010film transistors (FeTFTs) affect TCAM search operation and long\u2010term robustness. By comparing ZrO\n                    <jats:sub>2<\/jats:sub>\n                    (11\u2009nm), ZrO\n                    <jats:sub>2<\/jats:sub>\n                    (8\u2009nm), and HfO\n                    <jats:sub>2<\/jats:sub>\n                    (8\u2009nm) gate dielectrics, we decouple the effects of material substitution, thickness scaling, and equivalent\u2010oxide\u2010thickness (EOT)\u2010matched behavior. All devices show proper initial TCAM operation, with ZrO\n                    <jats:sub>2<\/jats:sub>\n                    8\u2009nm exhibiting the highest initial sensing performance owing to its larger read current. Under repeated search cycling, however, ZrO\n                    <jats:sub>2<\/jats:sub>\n                    11\u2009nm proves the most robust, while HfO\n                    <jats:sub>2<\/jats:sub>\n                    8\u2009nm suffers the most severe degradation\u2014governed by competition between electron trapping and donor\u2010like state creation rather than conventional ferroelectric fatigue. One\u2010shot classification simulations using experimentally extracted bit error rate (BER) trends confirm that device\u2010level degradation directly translates into accuracy loss, with ZrO\n                    <jats:sub>2<\/jats:sub>\n                    11\u2009nm retaining the highest accuracy. Increasing the memcapacitor area ratio enlarges the memory window but degrades sensing response due to added parasitic capacitance and RC delay. These findings establish gate\u2010dielectric and interface design guidelines for search\u2010robust FeTFT\u2010based TCAM.\n                  <\/jats:p>","DOI":"10.1002\/smsc.70421","type":"journal-article","created":{"date-parts":[[2026,10,7]],"date-time":"2026-10-07T06:27:28Z","timestamp":1791354448000},"source":"Crossref","is-referenced-by-count":0,"title":["Unveiling Search\u2010Robust One\u2010Shot Learning Operation in FeTFT\u2010Based Ternary Content\u2010Addressable Memory"],"prefix":"10.1002","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-1177-3095","authenticated-orcid":false,"given":"Hyeonjung","family":"Park","sequence":"first","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Changwoo","family":"Han","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering College of Engineering Korea University  Seoul South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yejoo","family":"Choi","sequence":"additional","affiliation":[{"name":"Semiconductor R&amp;D Center Samsung Electronics  Hwaseong South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Junseok","family":"Kim","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering College of Engineering Korea University  Seoul South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Myeongjae","family":"Choi","sequence":"additional","affiliation":[{"name":"School of Semiconductor System Engineering College of Engineering  Seoul South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-6599-4798","authenticated-orcid":false,"given":"Huiseong","family":"Shin","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering College of Engineering Korea University  Seoul South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Seungjoon","family":"Jeong","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering College of Engineering Korea University  Seoul South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jeongheon","family":"Cho","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering College of Engineering Korea University  Seoul South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Chaeho","family":"Kwon","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering College of Engineering Korea University  Seoul South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5750-8628","authenticated-orcid":false,"given":"Sang Min","family":"Won","sequence":"additional","affiliation":[{"name":"Department of Electrical and Computer Engineering Sungkyunkwan University  Suwon South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6057-3773","authenticated-orcid":false,"given":"Changhwan","family":"Shin","sequence":"additional","affiliation":[{"name":"School of Electrical Engineering College of Engineering Korea University  Seoul South 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