{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,10,1]],"date-time":"2026-10-01T19:44:30Z","timestamp":1790883870066,"version":"4.1.0"},"reference-count":58,"publisher":"Wiley","issue":"12","license":[{"start":{"date-parts":[[2021,10,24]],"date-time":"2021-10-24T00:00:00Z","timestamp":1635033600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Small Methods"],"published-print":{"date-parts":[[2021,12]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>2D semiconductors, such as transition metal dichalcogenides (TMDs) show a rare combination of physical properties that include a large\u2010enough bandgap to ensure sufficient current modulation in transistors, matching electron and hole mobility for complimentary logic operation, and sufficient mechanical flexibility of the nanosheets. Moreover, the solvent\u2010exfoliated TMD\u2010nanosheets may also be processed at low temperatures and onto a wide variety of substrates. However, the poor inter\u2010flake transport in solution\u2010cast 2D\u2010TMD network transistors hinders the realization of high device mobility and current modulations that the intraflake transistors can regularly demonstrate. In this regard, fully printed and electrolyte\u2010gated, narrow\u2010channel MoS<jats:sub>2<\/jats:sub> field\u2010effect transistors (FETs) with simultaneous high current saturation (&gt;310 \u00b5A \u00b5m<jats:sup>\u22121<\/jats:sup>) and on\u2013off ratio (&gt;10<jats:sup>6<\/jats:sup>) are proposed here. The transport limitation is overcome by printing an additional metal layer onto the 2D\u2010TMD nanosheet channel, which substantially shortens the effective channel lengths and results in predominant intraflake transport. In addition, a channel\u2010capacitance\u2010modulation induced subthermionic transport is recorded, which leads to a subthreshold slope value as low as 7.5\u00a0mV dec<jats:sup>\u22121<\/jats:sup>. On the other hand, thermionic MOSFETs and fully printed depletion\u2010mode NMOS inverters are also presented. The demonstrated generic approach involving chemically exfoliated nanosheet inks and the absolute device yield indicates the feasibility of fully printed 2D\u2010TMD electronics.<\/jats:p>","DOI":"10.1002\/smtd.202100634","type":"journal-article","created":{"date-parts":[[2021,10,25]],"date-time":"2021-10-25T04:51:03Z","timestamp":1635137463000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":47,"title":["Inkjet\u2010Printed MoS<sub>2<\/sub> Transistors with Predominantly Intraflake Transport"],"prefix":"10.1002","volume":"5","author":[{"given":"Sandeep K.","family":"Mondal","sequence":"first","affiliation":[{"name":"Department of Materials Engineering Indian Institute of Science (IISc)  C V Raman Avenue Bengaluru 560012 India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Ananya","family":"Biswas","sequence":"additional","affiliation":[{"name":"Department of Organic Chemistry Indian Institute of Science (IISc)  C V Raman Avenue Bengaluru 560012 India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Jyoti R.","family":"Pradhan","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering Indian Institute of Science (IISc)  C V Raman Avenue Bengaluru 560012 India"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3952-2952","authenticated-orcid":false,"given":"Subho","family":"Dasgupta","sequence":"additional","affiliation":[{"name":"Department of Materials Engineering Indian Institute of Science (IISc)  C V Raman Avenue Bengaluru 560012 India"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"311","published-online":{"date-parts":[[2021,10,24]]},"reference":[{"key":"e_1_2_8_1_1","doi-asserted-by":"publisher","DOI":"10.1038\/nchem.1589"},{"key":"e_1_2_8_2_1","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0502848102"},{"key":"e_1_2_8_3_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"e_1_2_8_4_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2012.193"},{"key":"e_1_2_8_5_1","doi-asserted-by":"publisher","DOI":"10.1039\/C5CS00275C"},{"key":"e_1_2_8_6_1","doi-asserted-by":"publisher","DOI":"10.1038\/natrevmats.2016.52"},{"key":"e_1_2_8_7_1","first-page":"797","volume":"37","author":"Ganapathi K. 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